BU807FI Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU807FI

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 330 V

Tensión colector-emisor (Vce): 150 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO220F

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BU807FI datasheet

 ..1. Size:197K  inchange semiconductor
 bu807fi.pdf pdf_icon

BU807FI

isc Silicon NPN Darlington Power Transistor BU807FI DESCRIPTION High Voltage V = 330V(Min) CBO Low Saturation Voltage- V = 1.5V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits in TV s and CRT s. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

 8.1. Size:200K  inchange semiconductor
 bu807f.pdf pdf_icon

BU807FI

isc Silicon NPN Darlington Power Transistor BU807F DESCRIPTION High Voltage V = 330V(Min) CBO Low Saturation Voltage- V = 1.5V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits in TV s and CRT s. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

 9.1. Size:57K  st
 bu806 bu807.pdf pdf_icon

BU807FI

BU806 BU807 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN DARLINGTONS LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION HORIZONTAL DEFLECTION FOR 3 2 MONOCHROME TVs 1 DESCRIPTION TO-220 The devices are silicon Epitaxial Planar NPN power transistors in Darlington configu

 9.2. Size:39K  fairchild semi
 bu806 bu807.pdf pdf_icon

BU807FI

BU806/807 High Voltage & Fast Switching Darlington Transistor Using In Horizontal Output Stages of 110 Crt Video Displays BUILT-IN SPEED-UP Diode Between Base and Emitter TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base V

MOSTRAR MÁS

Otros transistores... BU800A, BU800S, BU801, BU806, BU806F, BU806FI, BU807, BU807F, S9018, BU808, 2SB647-C, BU808DFI, BU808DXI, BU808FI, BU810, BU824, BU826