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BU807FI . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU807FI
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 330 V
   Tensión colector-emisor (Vce): 150 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO220F
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BU807FI Datasheet (PDF)

 ..1. Size:197K  inchange semiconductor
bu807fi.pdf pdf_icon

BU807FI

isc Silicon NPN Darlington Power Transistor BU807FIDESCRIPTIONHigh Voltage: V = 330V(Min)CBOLow Saturation Voltage-: V = 1.5V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits in TVsand CRTs.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

 8.1. Size:200K  inchange semiconductor
bu807f.pdf pdf_icon

BU807FI

isc Silicon NPN Darlington Power Transistor BU807FDESCRIPTIONHigh Voltage: V = 330V(Min)CBOLow Saturation Voltage-: V = 1.5V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits in TVsand CRTs.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

 9.1. Size:57K  st
bu806 bu807.pdf pdf_icon

BU807FI

BU806BU807MEDIUM VOLTAGE NPN FAST SWITCHINGDARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES NPN DARLINGTONS LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATION HORIZONTAL DEFLECTION FOR32MONOCHROME TVs 1DESCRIPTION TO-220The devices are silicon Epitaxial Planar NPNpower transistors in Darlington configu

 9.2. Size:39K  fairchild semi
bu806 bu807.pdf pdf_icon

BU807FI

BU806/807High Voltage & Fast Switching Darlington Transistor Using In Horizontal Output Stages of 110 Crt Video Displays BUILT-IN SPEED-UP Diode Between Base and EmitterTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base V

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History: MJE3440 | CHDTA113TKGP | MMDT3904 | 2N3299 | 2N2969 | 2T6551 | SQ3019

 

 
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