BU807FI Specs and Replacement

Type Designator: BU807FI

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 330 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO220F

 BU807FI Substitution

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BU807FI datasheet

 ..1. Size:197K  inchange semiconductor

bu807fi.pdf pdf_icon

BU807FI

isc Silicon NPN Darlington Power Transistor BU807FI DESCRIPTION High Voltage V = 330V(Min) CBO Low Saturation Voltage- V = 1.5V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits in TV s and CRT s. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET... See More ⇒

 8.1. Size:200K  inchange semiconductor

bu807f.pdf pdf_icon

BU807FI

isc Silicon NPN Darlington Power Transistor BU807F DESCRIPTION High Voltage V = 330V(Min) CBO Low Saturation Voltage- V = 1.5V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits in TV s and CRT s. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒

 9.1. Size:57K  st

bu806 bu807.pdf pdf_icon

BU807FI

BU806 BU807 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN DARLINGTONS LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION HORIZONTAL DEFLECTION FOR 3 2 MONOCHROME TVs 1 DESCRIPTION TO-220 The devices are silicon Epitaxial Planar NPN power transistors in Darlington configu... See More ⇒

 9.2. Size:39K  fairchild semi

bu806 bu807.pdf pdf_icon

BU807FI

BU806/807 High Voltage & Fast Switching Darlington Transistor Using In Horizontal Output Stages of 110 Crt Video Displays BUILT-IN SPEED-UP Diode Between Base and Emitter TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base V... See More ⇒

Detailed specifications: BU800A, BU800S, BU801, BU806, BU806F, BU806FI, BU807, BU807F, S9018, BU808, 2SB647-C, BU808DFI, BU808DXI, BU808FI, BU810, BU824, BU826

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