BUH1215 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUH1215

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 200 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 700 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 19 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO218

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BUH1215 datasheet

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BUH1215

BUH1215 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR 3 TV AND MONITORS 2 1 DESCRIPTION The BUH1215 is manufactured using TO-218 Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structur

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BUH1215

isc Silicon NPN Power Transistor BUH1215 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min.) CEO(SUS) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits in televisions and monitors. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

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