BUH1215 Datasheet. Specs and Replacement

Type Designator: BUH1215  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 200 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 19 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO218

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BUH1215 datasheet

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BUH1215

BUH1215 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR 3 TV AND MONITORS 2 1 DESCRIPTION The BUH1215 is manufactured using TO-218 Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structur... See More ⇒

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BUH1215

isc Silicon NPN Power Transistor BUH1215 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min.) CEO(SUS) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits in televisions and monitors. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒

Detailed specifications: BUF654, BUF660, BUF672, BUF725D, BUF742, BUF744, BUH100, BUH1015, 2N3906, BUH150, BUH2M20AP, BUH2M20P, BUH313, BUH313D, BUH315, BUH315D, BUH315DXI

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