BUH1215 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUH1215
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 19 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO218
BUH1215 Transistor Equivalent Substitute - Cross-Reference Search
BUH1215 Datasheet (PDF)
buh1215.pdf
BUH1215 HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEEDAPPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR3TV AND MONITORS21DESCRIPTIONThe BUH1215 is manufactured usingTO-218Multiepitaxial Mesa technology for cost-effectivehigh performance and uses a Hollow Emitterstructur
buh1215.pdf
isc Silicon NPN Power Transistor BUH1215DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits in televisionsand monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
