BUH50 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUH50

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-base (Vcb): 800 V

Tensión colector-emisor (Vce): 500 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Capacitancia de salida (Cc): 100 pF

Ganancia de corriente contínua (hFE): 7

Encapsulados: TO220

 Búsqueda de reemplazo de BUH50

- Selecciónⓘ de transistores por parámetros

 

BUH50 datasheet

 0.1. Size:478K  motorola
 buh50rev.pdf pdf_icon

BUH50

Order this document MOTOROLA by BUH50/D SEMICONDUCTOR TECHNICAL DATA BUH50 Designer's Data Sheet POWER TRANSISTOR 4 AMPERES SWITCHMODE NPN Silicon 800 VOLTS Planar Power Transistor 50 WATTS The BUH50 has an application specific state of art die designed for use in 50 Watts HALOGEN electronic transformers and switchmode applications. This high voltage/high speed transistor e

 0.2. Size:247K  onsemi
 buh50-d.pdf pdf_icon

BUH50

BUH50G SWITCHMODEt NPN Silicon Planar Power Transistor The BUH50G has an application specific state-of-art die designed for use in 50 Watts HALOGEN electronic transformers and http //onsemi.com SWITCHMODE applications. POWER TRANSISTOR Features 4 AMPERES Improved Efficiency Due to Low Base Drive Requirements 800 VOLTS, 50 WATTS High and Flat DC Current Gain hFE Fast Switching

Otros transistores... BUH2M20P, BUH313, BUH313D, BUH315, BUH315D, BUH315DXI, BUH415DXI, BUH417, S8550, BUH51, BUH513, BUH515, BUH515D, BUH515DXI, BUH515XI, BUH517, BUH517D