BUH50 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUH50
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 500 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 7
Noise Figure, dB: -
Package: TO220
BUH50 Transistor Equivalent Substitute - Cross-Reference Search
BUH50 Datasheet (PDF)
buh50rev.pdf
Order this documentMOTOROLAby BUH50/DSEMICONDUCTOR TECHNICAL DATABUH50Designer's Data SheetPOWER TRANSISTOR4 AMPERESSWITCHMODE NPN Silicon800 VOLTSPlanar Power Transistor50 WATTSThe BUH50 has an application specific stateofart die designed for use in50 Watts HALOGEN electronic transformers and switchmode applications.This high voltage/high speed transistor e
buh50-d.pdf
BUH50GSWITCHMODEt NPNSilicon Planar PowerTransistorThe BUH50G has an application specific state-of-art die designedfor use in 50 Watts HALOGEN electronic transformers and http://onsemi.comSWITCHMODE applications.POWER TRANSISTORFeatures4 AMPERES Improved Efficiency Due to Low Base Drive Requirements:800 VOLTS, 50 WATTSHigh and Flat DC Current Gain hFEFast Switching
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
