BUH50 Specs and Replacement

Type Designator: BUH50

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 500 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 100 pF

Forward Current Transfer Ratio (hFE), MIN: 7

Noise Figure, dB: -

Package: TO220

 BUH50 Substitution

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BUH50 datasheet

 0.1. Size:478K  motorola

 buh50rev.pdf pdf_icon

BUH50

Order this document MOTOROLA by BUH50/D SEMICONDUCTOR TECHNICAL DATA BUH50 Designer's Data Sheet POWER TRANSISTOR 4 AMPERES SWITCHMODE NPN Silicon 800 VOLTS Planar Power Transistor 50 WATTS The BUH50 has an application specific state of art die designed for use in 50 Watts HALOGEN electronic transformers and switchmode applications. This high voltage/high speed transistor e... See More ⇒

 0.2. Size:247K  onsemi

 buh50-d.pdf pdf_icon

BUH50

BUH50G SWITCHMODEt NPN Silicon Planar Power Transistor The BUH50G has an application specific state-of-art die designed for use in 50 Watts HALOGEN electronic transformers and http //onsemi.com SWITCHMODE applications. POWER TRANSISTOR Features 4 AMPERES Improved Efficiency Due to Low Base Drive Requirements 800 VOLTS, 50 WATTS High and Flat DC Current Gain hFE Fast Switching ... See More ⇒

Detailed specifications: BUH2M20P, BUH313, BUH313D, BUH315, BUH315D, BUH315DXI, BUH415DXI, BUH417, S8550, BUH51, BUH513, BUH515, BUH515D, BUH515DXI, BUH515XI, BUH517, BUH517D

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