All Transistors. BUH50 Datasheet

 

BUH50 Datasheet and Replacement


   Type Designator: BUH50
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 800 V
   Maximum Collector-Emitter Voltage |Vce|: 500 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 100 pF
   Forward Current Transfer Ratio (hFE), MIN: 7
   Noise Figure, dB: -
   Package: TO220
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BUH50 Datasheet (PDF)

 0.1. Size:478K  motorola
 buh50rev.pdf pdf_icon

BUH50

Order this documentMOTOROLAby BUH50/DSEMICONDUCTOR TECHNICAL DATABUH50Designer's Data SheetPOWER TRANSISTOR4 AMPERESSWITCHMODE NPN Silicon800 VOLTSPlanar Power Transistor50 WATTSThe BUH50 has an application specific stateofart die designed for use in50 Watts HALOGEN electronic transformers and switchmode applications.This high voltage/high speed transistor e

 0.2. Size:247K  onsemi
 buh50-d.pdf pdf_icon

BUH50

BUH50GSWITCHMODEt NPNSilicon Planar PowerTransistorThe BUH50G has an application specific state-of-art die designedfor use in 50 Watts HALOGEN electronic transformers and http://onsemi.comSWITCHMODE applications.POWER TRANSISTORFeatures4 AMPERES Improved Efficiency Due to Low Base Drive Requirements:800 VOLTS, 50 WATTSHigh and Flat DC Current Gain hFEFast Switching

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: ESM2060 | MMSTA64 | DTA123EET1G | 3DD4617H | MP602 | BC817-16W | ESM259

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