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BUL53A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUL53A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 45 W
   Tensión colector-base (Vcb): 700 V
   Tensión colector-emisor (Vce): 300 V
   Corriente del colector DC máxima (Ic): 9 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

BUL53A Datasheet (PDF)

 0.1. Size:10K  semelab
 bul53asmd.pdf pdf_icon

BUL53A

BUL53ASMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 300V IC = 10A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26

 9.1. Size:28K  semelab
 bul53b-sm.pdf pdf_icon

BUL53A

BUL53BSMSEMELABADVANCED DISTRIBUTEDMECHANICAL DATABASE DESIGNHIGH VOLTAGE, HIGH SPEED NPNSILICON POWER TRANSISTOR CERAMIC SURFACE MOUNT PACKAGE FULL MIL/AEROSPACE TEMPERATURE11.52.0 RANGE0.253.5 3.5 3.0 SCREENING OPTIONS FOR MILITARY ANDSPACE APPLICATIONS SEMEFAB DESIGNED AND DIFFUSED DIE1 3 HIGH VOLTAGE (VCBO = 800V) FAST SWITCHING (tf

 9.2. Size:20K  semelab
 bul53bsmd.pdf pdf_icon

BUL53A

BUL53BSMDADVANCED DISTRIBUTEDMECHANICAL DATABASE DESIGNDimensions in mmHIGH VOLTAGE, HIGH SPEED NPNSILICON POWER TRANSISTOR CERAMIC SURFACE MOUNT PACKAGE FULL MIL/AEROSPACE TEMPERATURERANGE SCREENING OPTIONS FOR MILITARY ANDSPACE APPLICATIONS SEMEFAB DESIGNED

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: KRC407V | DTA024EEB | ZTX454

 

 
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