BUL53A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUL53A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 45 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 300 V

Corriente del colector DC máxima (Ic): 9 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO220

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BUL53A datasheet

 0.1. Size:10K  semelab
 bul53asmd.pdf pdf_icon

BUL53A

BUL53ASMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 300V IC = 10A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26

 9.1. Size:28K  semelab
 bul53b-sm.pdf pdf_icon

BUL53A

BUL53B SM SEME LAB ADVANCED DISTRIBUTED MECHANICAL DATA BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR CERAMIC SURFACE MOUNT PACKAGE FULL MIL/AEROSPACE TEMPERATURE 11.5 2.0 RANGE 0.25 3.5 3.5 3.0 SCREENING OPTIONS FOR MILITARY AND SPACE APPLICATIONS SEMEFAB DESIGNED AND DIFFUSED DIE 1 3 HIGH VOLTAGE (VCBO = 800V) FAST SWITCHING (tf

 9.2. Size:20K  semelab
 bul53bsmd.pdf pdf_icon

BUL53A

BUL53BSMD ADVANCED DISTRIBUTED MECHANICAL DATA BASE DESIGN Dimensions in mm HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR CERAMIC SURFACE MOUNT PACKAGE FULL MIL/AEROSPACE TEMPERATURE RANGE SCREENING OPTIONS FOR MILITARY AND SPACE APPLICATIONS SEMEFAB DESIGNED

Otros transistores... BUL50B, BUL510, BUL51A, BUL51B, BUL52A, BUL52AFI, BUL52B, BUL52BFI, BC547B, BUL53B, BUL54A, BUL54AFI, BUL54B, BUL54BFI, BUL55A, BUL55B, BUL56A