BUL53A Specs and Replacement

Type Designator: BUL53A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 45 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Collector Current |Ic max|: 9 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO220

 BUL53A Substitution

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BUL53A datasheet

 0.1. Size:10K  semelab

 bul53asmd.pdf pdf_icon

BUL53A

BUL53ASMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 300V IC = 10A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 ... See More ⇒

 9.1. Size:28K  semelab

 bul53b-sm.pdf pdf_icon

BUL53A

BUL53B SM SEME LAB ADVANCED DISTRIBUTED MECHANICAL DATA BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR CERAMIC SURFACE MOUNT PACKAGE FULL MIL/AEROSPACE TEMPERATURE 11.5 2.0 RANGE 0.25 3.5 3.5 3.0 SCREENING OPTIONS FOR MILITARY AND SPACE APPLICATIONS SEMEFAB DESIGNED AND DIFFUSED DIE 1 3 HIGH VOLTAGE (VCBO = 800V) FAST SWITCHING (tf... See More ⇒

 9.2. Size:20K  semelab

 bul53bsmd.pdf pdf_icon

BUL53A

BUL53BSMD ADVANCED DISTRIBUTED MECHANICAL DATA BASE DESIGN Dimensions in mm HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR CERAMIC SURFACE MOUNT PACKAGE FULL MIL/AEROSPACE TEMPERATURE RANGE SCREENING OPTIONS FOR MILITARY AND SPACE APPLICATIONS SEMEFAB DESIGNED ... See More ⇒

Detailed specifications: BUL50B, BUL510, BUL51A, BUL51B, BUL52A, BUL52AFI, BUL52B, BUL52BFI, BC547B, BUL53B, BUL54A, BUL54AFI, BUL54B, BUL54BFI, BUL55A, BUL55B, BUL56A

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