BUL810 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUL810

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 125 W

Tensión colector-base (Vcb): 1000 V

Tensión colector-emisor (Vce): 450 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO218

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BUL810 datasheet

 ..1. Size:215K  st
 bul810.pdf pdf_icon

BUL810

BUL810 High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Low base-drive requirements Very high switching speed Fully characterized at 125 C 3 2 1 Applications TO-247 Electronic transformer for halogen lamps Electronic ballast for fluorescent lighting Switch mode power supplies. Fig

 ..2. Size:139K  inchange semiconductor
 bul810.pdf pdf_icon

BUL810

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL810 DESCRIPTION High Voltage Capability High Switching Speed APPLICATIONS Designed for use in lighting applications and low cost swith-mode power supplies. Electronic transformer for halogen lamps Electronic ballasts for fluorescent lighting Switch mode power supplies ABSOLUTE MA

Otros transistores... BUL58B, BUL58D, BUL59A, BUL67, BUL74A, BUL74B, BUL76A, BUL76B, 2N3904, BUL87, BUL98B, BULD138-1, BULD26-1, BULD38-1, BULK26D, BULK381, BULK382