BUL810 Specs and Replacement
Type Designator: BUL810
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO218
BUL810 Substitution
- BJT ⓘ Cross-Reference Search
BUL810 datasheet
BUL810 High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Low base-drive requirements Very high switching speed Fully characterized at 125 C 3 2 1 Applications TO-247 Electronic transformer for halogen lamps Electronic ballast for fluorescent lighting Switch mode power supplies. Fig... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL810 DESCRIPTION High Voltage Capability High Switching Speed APPLICATIONS Designed for use in lighting applications and low cost swith-mode power supplies. Electronic transformer for halogen lamps Electronic ballasts for fluorescent lighting Switch mode power supplies ABSOLUTE MA... See More ⇒
Detailed specifications: BUL58B, BUL58D, BUL59A, BUL67, BUL74A, BUL74B, BUL76A, BUL76B, 2N3904, BUL87, BUL98B, BULD138-1, BULD26-1, BULD38-1, BULK26D, BULK381, BULK382
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