All Transistors. BUL810 Datasheet

 

BUL810 Datasheet and Replacement


   Type Designator: BUL810
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 1000 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO218
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BUL810 Datasheet (PDF)

 ..1. Size:215K  st
 bul810.pdf pdf_icon

BUL810

BUL810High voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Low base-drive requirements Very high switching speed Fully characterized at 125 C321ApplicationsTO-247 Electronic transformer for halogen lamps Electronic ballast for fluorescent lighting Switch mode power supplies.Fig

 ..2. Size:139K  inchange semiconductor
 bul810.pdf pdf_icon

BUL810

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL810 DESCRIPTION High Voltage Capability High Switching Speed APPLICATIONS Designed for use in lighting applications and low cost swith-mode power supplies. Electronic transformer for halogen lamps Electronic ballasts for fluorescent lighting Switch mode power supplies ABSOLUTE MA

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: ECG185 | DTC124EEB | 2N2904 | ECG332 | 2N5784 | 2SA1488 | NXP3875G

Keywords - BUL810 transistor datasheet

 BUL810 cross reference
 BUL810 equivalent finder
 BUL810 lookup
 BUL810 substitution
 BUL810 replacement

 

 
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