BUL810 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUL810
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO218
BUL810 Transistor Equivalent Substitute - Cross-Reference Search
BUL810 Datasheet (PDF)
bul810.pdf
BUL810High voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Low base-drive requirements Very high switching speed Fully characterized at 125 C321ApplicationsTO-247 Electronic transformer for halogen lamps Electronic ballast for fluorescent lighting Switch mode power supplies.Fig
bul810.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL810 DESCRIPTION High Voltage Capability High Switching Speed APPLICATIONS Designed for use in lighting applications and low cost swith-mode power supplies. Electronic transformer for halogen lamps Electronic ballasts for fluorescent lighting Switch mode power supplies ABSOLUTE MA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: LMBT5401DW1T1G
History: LMBT5401DW1T1G
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