BUS50 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUS50

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 300 W

Tensión colector-base (Vcb): 200 V

Tensión colector-emisor (Vce): 125 V

Corriente del colector DC máxima (Ic): 70 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO3

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BUS50 datasheet

 ..1. Size:208K  inchange semiconductor
 bus50.pdf pdf_icon

BUS50

isc Silicon NPN Power Transistor BUS50 DESCRIPTION Collector Emitter Sustaining Voltage V = 125V(Min.) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage ,high speed,power switching in Inductive circuits where fall time is critical.It is particularly suited for battery swit

 0.1. Size:115K  motorola
 bus50rev.pdf pdf_icon

BUS50

Order this document MOTOROLA by BUS50/D SEMICONDUCTOR TECHNICAL DATA BUS50 SWITCHMODE Series 70 AMPERES NPN Silicon Power Transistors NPN SILICON POWER TRANSISTOR The BUS50 transistor is designed for low voltage, high speed, power switching in 125 VOLTS (BVCEO) inductive circuits where fall time is critical. It is particularly suited for battery 350 WATTS switchmode applications

Otros transistores... BUS47, BUS47A, BUS47AP, BUS47P, BUS48, BUS48A, BUS48AP, BUS48P, 8550, BUS51, BUS52, BUS97, BUS97A, BUS98, BUS98A, BUT100, BUT102