All Transistors. BUS50 Datasheet

 

BUS50 Datasheet and Replacement


   Type Designator: BUS50
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 300 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 125 V
   Maximum Collector Current |Ic max|: 70 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
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BUS50 Datasheet (PDF)

 ..1. Size:208K  inchange semiconductor
 bus50.pdf pdf_icon

BUS50

isc Silicon NPN Power Transistor BUS50DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 125V(Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage ,high speed,power switching inInductive circuits where fall time is critical.It is particularlysuited for battery swit

 0.1. Size:115K  motorola
 bus50rev.pdf pdf_icon

BUS50

Order this documentMOTOROLAby BUS50/DSEMICONDUCTOR TECHNICAL DATABUS50SWITCHMODE Series70 AMPERESNPN Silicon Power TransistorsNPN SILICONPOWER TRANSISTORThe BUS50 transistor is designed for low voltage, highspeed, power switching in125 VOLTS (BVCEO)inductive circuits where fall time is critical. It is particularly suited for battery350 WATTSswitchmode applications

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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