All Transistors. BUS50 Datasheet


BUS50 Datasheet, Equivalent, Cross Reference Search

Type Designator: BUS50

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 300 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 125 V

Maximum Collector Current |Ic max|: 70 A

Max. Operating Junction Temperature (Tj): 200 °C

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

BUS50 Transistor Equivalent Substitute - Cross-Reference Search


BUS50 Datasheet (PDF)

1.1. bus50rev.pdf Size:115K _motorola


Order this document MOTOROLA by BUS50/D SEMICONDUCTOR TECHNICAL DATA BUS50 SWITCHMODE Series 70 AMPERES NPN Silicon Power Transistors NPN SILICON POWER TRANSISTOR The BUS50 transistor is designed for low voltage, highspeed, power switching in 125 VOLTS (BVCEO) inductive circuits where fall time is critical. It is particularly suited for battery 350 WATTS switchmode applications such

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .


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