BUS50 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUS50
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 125 V
Maximum Collector Current |Ic max|: 70 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
BUS50 Transistor Equivalent Substitute - Cross-Reference Search
BUS50 Datasheet (PDF)
bus50.pdf
isc Silicon NPN Power Transistor BUS50DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 125V(Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage ,high speed,power switching inInductive circuits where fall time is critical.It is particularlysuited for battery swit
bus50rev.pdf
Order this documentMOTOROLAby BUS50/DSEMICONDUCTOR TECHNICAL DATABUS50SWITCHMODE Series70 AMPERESNPN Silicon Power TransistorsNPN SILICONPOWER TRANSISTORThe BUS50 transistor is designed for low voltage, highspeed, power switching in125 VOLTS (BVCEO)inductive circuits where fall time is critical. It is particularly suited for battery350 WATTSswitchmode applications
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
