BUS50 Specs and Replacement
Type Designator: BUS50
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 125 V
Maximum Collector Current |Ic max|: 70 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
BUS50 Substitution
- BJT ⓘ Cross-Reference Search
BUS50 datasheet
isc Silicon NPN Power Transistor BUS50 DESCRIPTION Collector Emitter Sustaining Voltage V = 125V(Min.) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage ,high speed,power switching in Inductive circuits where fall time is critical.It is particularly suited for battery swit... See More ⇒
Order this document MOTOROLA by BUS50/D SEMICONDUCTOR TECHNICAL DATA BUS50 SWITCHMODE Series 70 AMPERES NPN Silicon Power Transistors NPN SILICON POWER TRANSISTOR The BUS50 transistor is designed for low voltage, high speed, power switching in 125 VOLTS (BVCEO) inductive circuits where fall time is critical. It is particularly suited for battery 350 WATTS switchmode applications... See More ⇒
Detailed specifications: BUS47 , BUS47A , BUS47AP , BUS47P , BUS48 , BUS48A , BUS48AP , BUS48P , 8550 , BUS51 , BUS52 , BUS97 , BUS97A , BUS98 , BUS98A , BUT100 , BUT102 .
History: 2SC2481 | 2SC2477 | 2SD1138B | 2SC2488 | 2SC2484 | 2SD1148 | 2N5232A
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