BUT21B Todos los transistores

 

BUT21B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUT21B
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 750 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 1.5 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar BUT21B

 

BUT21B Datasheet (PDF)

 9.1. Size:57K  philips
 but211x 1.pdf pdf_icon

BUT21B

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211X GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in a plastic full-pack envelope specially suited for high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage

 9.2. Size:54K  philips
 but211 1.pdf pdf_icon

BUT21B

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE

 9.3. Size:241K  inchange semiconductor
 but211.pdf pdf_icon

BUT21B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT211 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min.) High Speed Switching APPLICATIONS Designed for high frequency electronic lighting ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V V

 9.4. Size:232K  inchange semiconductor
 but211x.pdf pdf_icon

BUT21B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT211X DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min.) High Speed Switching APPLICATIONS Designed for high frequency electronic lighting ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V

MOSTRAR MÁS

Otros transistores... BUT18 , BUT18A , BUT18AF , BUT18F , BUT21 , BUT211 , BUT21A , BUT21AF , D667 , BUT21BF , BUT21C , BUT21CF , BUT22A , BUT22B , BUT22BF , BUT22C , BUT22CF .

History: SYL2246 | DTA143XM

 

 
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