All Transistors. BUT21B Datasheet

 

BUT21B Datasheet and Replacement


   Type Designator: BUT21B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 750 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 1.5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO220
 

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BUT21B Datasheet (PDF)

 9.1. Size:57K  philips
 but211x 1.pdf pdf_icon

BUT21B

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211X GENERAL DESCRIPTIONEnhanced performance, new generation, high speed switching npn transistor in a plastic full-pack envelopespecially suited for high frequency electronic lighting ballast applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage

 9.2. Size:54K  philips
 but211 1.pdf pdf_icon

BUT21B

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTIONEnhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suitedfor high frequency electronic lighting ballast applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VBE

 9.3. Size:241K  inchange semiconductor
 but211.pdf pdf_icon

BUT21B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT211 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) High Speed Switching APPLICATIONS Designed for high frequency electronic lighting ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 850 V V

 9.4. Size:232K  inchange semiconductor
 but211x.pdf pdf_icon

BUT21B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT211X DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) High Speed Switching APPLICATIONS Designed for high frequency electronic lighting ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 850 V

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

Keywords - BUT21B transistor datasheet

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