BUV22 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUV22

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 250 W

Tensión colector-base (Vcb): 300 V

Tensión colector-emisor (Vce): 125 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 40 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 8 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO3

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BUV22 datasheet

 ..1. Size:212K  onsemi
 buv22.pdf pdf_icon

BUV22

BUV22 Switch-mode Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. http //onsemi.com Features 40 AMPERES High DC Current Gain NPN SILICON POWER hFE min = 20 at IC = 10 A METAL TRANSISTOR Low VCE(sat), VCE(sat) 250 VOLTS - 250 WATTS max = 1.0 V at IC = 10 A Very Fast Switching Times TF max = 0.35 ms

 ..2. Size:77K  inchange semiconductor
 buv22.pdf pdf_icon

BUV22

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV22 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= 1.0V (Max.) @IC= 10A High Switching Speed High DC Current Gain- hFE= 20(Min.) @IC= 10A APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER

 0.1. Size:137K  motorola
 buv22rev.pdf pdf_icon

BUV22

Order this document MOTOROLA by BUV22/D SEMICONDUCTOR TECHNICAL DATA BUV22 SWITCHMODE Series 40 AMPERES NPN Silicon Power Transistor NPN SILICON POWER . . . designed for high current, high speed, high power applications. METAL TRANSISTOR High DC current gain HFE min. = 20 at IC = 10 A 250 VOLTS Low VCE(sat) VCE(sat) max. = 1.0 V at IC = 10 A 250 WATTS Very fast switc

 0.2. Size:70K  onsemi
 buv22-d.pdf pdf_icon

BUV22

BUV22 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. http //onsemi.com Features 40 AMPERES High DC Current Gain NPN SILICON POWER hFE min = 20 at IC = 10 A METAL TRANSISTOR Low VCE(sat), VCE(sat) 250 VOLTS - 250 WATTS max = 1.0 V at IC = 10 A Very Fast Switching Times TF max = 0.35 ms

MOSTRAR MÁS

Otros transistores... BUV12, BUV18, BUV18X, BUV19, BUV1O, BUV20, BUV21, BUV21N, 2SD313, BUV23, BUV24, BUV25, BUV26, BUV26A, BUV26F, BUV26FI, BUV27