BUV22 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUV22
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 250 W
Tensión colector-base (Vcb): 300 V
Tensión colector-emisor (Vce): 125 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 40 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 8 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar BUV22
BUV22 Datasheet (PDF)
buv22.pdf
BUV22Switch-mode SeriesNPN Silicon PowerTransistorThis device is designed for high speed, high current, high power applications.http://onsemi.comFeatures40 AMPERES High DC Current Gain:NPN SILICON POWERhFE min = 20 at IC = 10 AMETAL TRANSISTOR Low VCE(sat), VCE(sat)250 VOLTS - 250 WATTSmax = 1.0 V at IC = 10 A Very Fast Switching Times:TF max = 0.35 ms
buv22.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV22 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= 1.0V (Max.) @IC= 10A High Switching Speed High DC Current Gain- : hFE= 20(Min.) @IC= 10A APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25) SYMBOL PARAMETER
buv22rev.pdf
Order this documentMOTOROLAby BUV22/DSEMICONDUCTOR TECHNICAL DATABUV22SWITCHMODE Series40 AMPERESNPN Silicon Power TransistorNPN SILICONPOWER. . . designed for high current, high speed, high power applications.METAL TRANSISTOR High DC current gain: HFE min. = 20 at IC = 10 A 250 VOLTS Low VCE(sat): VCE(sat) max. = 1.0 V at IC = 10 A 250 WATTS Very fast switc
buv22-d.pdf
BUV22SWITCHMODEt SeriesNPN Silicon PowerTransistorThis device is designed for high speed, high current, high powerapplications. http://onsemi.comFeatures40 AMPERES High DC Current Gain:NPN SILICON POWERhFE min = 20 at IC = 10 AMETAL TRANSISTOR Low VCE(sat), VCE(sat) 250 VOLTS - 250 WATTSmax = 1.0 V at IC = 10 A Very Fast Switching Times:TF max = 0.35 ms
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
