All Transistors. BUV22 Datasheet

 

BUV22 Datasheet and Replacement


   Type Designator: BUV22
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 250 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 125 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 40 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
      - BJT Cross-Reference Search

   

BUV22 Datasheet (PDF)

 ..1. Size:212K  onsemi
 buv22.pdf pdf_icon

BUV22

BUV22Switch-mode SeriesNPN Silicon PowerTransistorThis device is designed for high speed, high current, high power applications.http://onsemi.comFeatures40 AMPERES High DC Current Gain:NPN SILICON POWERhFE min = 20 at IC = 10 AMETAL TRANSISTOR Low VCE(sat), VCE(sat)250 VOLTS - 250 WATTSmax = 1.0 V at IC = 10 A Very Fast Switching Times:TF max = 0.35 ms

 ..2. Size:77K  inchange semiconductor
 buv22.pdf pdf_icon

BUV22

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV22 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= 1.0V (Max.) @IC= 10A High Switching Speed High DC Current Gain- : hFE= 20(Min.) @IC= 10A APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25) SYMBOL PARAMETER

 0.1. Size:137K  motorola
 buv22rev.pdf pdf_icon

BUV22

Order this documentMOTOROLAby BUV22/DSEMICONDUCTOR TECHNICAL DATABUV22SWITCHMODE Series40 AMPERESNPN Silicon Power TransistorNPN SILICONPOWER. . . designed for high current, high speed, high power applications.METAL TRANSISTOR High DC current gain: HFE min. = 20 at IC = 10 A 250 VOLTS Low VCE(sat): VCE(sat) max. = 1.0 V at IC = 10 A 250 WATTS Very fast switc

 0.2. Size:70K  onsemi
 buv22-d.pdf pdf_icon

BUV22

BUV22SWITCHMODEt SeriesNPN Silicon PowerTransistorThis device is designed for high speed, high current, high powerapplications. http://onsemi.comFeatures40 AMPERES High DC Current Gain:NPN SILICON POWERhFE min = 20 at IC = 10 AMETAL TRANSISTOR Low VCE(sat), VCE(sat) 250 VOLTS - 250 WATTSmax = 1.0 V at IC = 10 A Very Fast Switching Times:TF max = 0.35 ms

SHOW MORE

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SA843 | 2N1962 | MMBT4122 | 2SB464 | 2SA1406 | 2SA1051A | 2N1963

Keywords - BUV22 transistor datasheet

 BUV22 cross reference
 BUV22 equivalent finder
 BUV22 lookup
 BUV22 substitution
 BUV22 replacement

 

 
Back to Top

 


 
.