BUV22 - параметры, поиск аналогов, даташиты транзистора

BUV22 Datasheet (PDF)

..1. Size:212K onsemi
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BUV22Switch-mode SeriesNPN Silicon PowerTransistorThis device is designed for high speed, high current, high power applications.http://onsemi.comFeatures40 AMPERES High DC Current Gain:NPN SILICON POWERhFE min = 20 at IC = 10 AMETAL TRANSISTOR Low VCE(sat), VCE(sat)250 VOLTS - 250 WATTSmax = 1.0 V at IC = 10 A Very Fast Switching Times:TF max = 0.35 ms

..2. Size:77K inchange semiconductor
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV22 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= 1.0V (Max.) @IC= 10A High Switching Speed High DC Current Gain- : hFE= 20(Min.) @IC= 10A APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25) SYMBOL PARAMETER

0.1. Size:137K motorola
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Order this documentMOTOROLAby BUV22/DSEMICONDUCTOR TECHNICAL DATABUV22SWITCHMODE Series40 AMPERESNPN Silicon Power TransistorNPN SILICONPOWER. . . designed for high current, high speed, high power applications.METAL TRANSISTOR High DC current gain: HFE min. = 20 at IC = 10 A 250 VOLTS Low VCE(sat): VCE(sat) max. = 1.0 V at IC = 10 A 250 WATTS Very fast switc

0.2. Size:70K onsemi
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BUV22SWITCHMODEt SeriesNPN Silicon PowerTransistorThis device is designed for high speed, high current, high powerapplications. http://onsemi.comFeatures40 AMPERES High DC Current Gain:NPN SILICON POWERhFE min = 20 at IC = 10 AMETAL TRANSISTOR Low VCE(sat), VCE(sat) 250 VOLTS - 250 WATTSmax = 1.0 V at IC = 10 A Very Fast Switching Times:TF max = 0.35 ms

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .