BUV47B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUV47B
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 120 W
   Tensión colector-base (Vcb): 850 V
   Tensión colector-emisor (Vce): 450 V
   Corriente del colector DC máxima (Ic): 9 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 5
Paquete / Cubierta: TOP3

Búsqueda de reemplazo de transistor bipolar BUV47B

BUV47B Datasheet (PDF)

..1. Size:218K inchange semiconductor
buv47b.pdf

isc Silicon NPN Power Transistor BUV47BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-:V = 1.5V(Max.)@I = 6ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 220V switch mode power supply, DC and ACmotor control ap

..2. Size:91K inchange semiconductor
buv47 buv47b.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV47 BUV47B DESCRIPTION With TO-3PN package. High voltage. Very high switching speed. APPLICATIONS Suited for 220V switchmode power supply, DC and AC motor control. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3

9.1. Size:215K st
bux47 bux47a buv47 buv47a bux47 bux47a buv47fi buv47afi.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I

9.2. Size:153K bourns
buv47-a.pdf

BUV47, BUV47ANPN SILICON POWER TRANSISTORS Rugged Triple-Diffused Planar ConstructionSOT-93 PACKAGE(TOP VIEW) 9 A Continuous Collector CurrentB1 1000 Volt Blocking CapabilityC 23EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maximum ratings at 25C case temperature (unless otherwise noted)RATING SYMBOL VALUE UNITBUV47 850Collec

9.3. Size:215K inchange semiconductor
buv47fi.pdf

isc Silicon NPN Power Transistor BUV47FIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-:V = 1.5V(Max.)@I = 6ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 220V switchmode power supply, DC and ACmotor control ap

9.4. Size:214K inchange semiconductor
buv47.pdf

isc Silicon NPN Power Transistor BUV47DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-:V = 1.5V(Max.)@I = 6ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 220V switchmode power supply, DC and ACmotor control appl

9.5. Size:217K inchange semiconductor
buv47afi.pdf

isc Silicon NPN Power Transistor BUV47AFIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-:V = 1.5V(Max.)@I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 220V switch mode power supply, DC and ACmotor control

9.6. Size:214K inchange semiconductor
buv47a.pdf

isc Silicon NPN Power Transistor BUV47ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-:V = 1.5V(Max.)@I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 220V switchmode power supply, DC and ACmotor control app

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BUT12A | 2N4386

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050