BUV47B Datasheet and Replacement
Type Designator: BUV47B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 850 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Collector Current |Ic max|: 9 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TOP3
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BUV47B Datasheet (PDF)
buv47b.pdf

isc Silicon NPN Power Transistor BUV47BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-:V = 1.5V(Max.)@I = 6ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 220V switch mode power supply, DC and ACmotor control ap
buv47 buv47b.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV47 BUV47B DESCRIPTION With TO-3PN package. High voltage. Very high switching speed. APPLICATIONS Suited for 220V switchmode power supply, DC and AC motor control. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3
bux47 bux47a buv47 buv47a bux47 bux47a buv47fi buv47afi.pdf

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buv47-a.pdf

BUV47, BUV47ANPN SILICON POWER TRANSISTORS Rugged Triple-Diffused Planar ConstructionSOT-93 PACKAGE(TOP VIEW) 9 A Continuous Collector CurrentB1 1000 Volt Blocking CapabilityC 23EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maximum ratings at 25C case temperature (unless otherwise noted)RATING SYMBOL VALUE UNITBUV47 850Collec
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: CFD1275Q | MM4019 | BTB1424AT3 | 2N2473 | 2N3183 | 2SB1144S | BF420A
Keywords - BUV47B transistor datasheet
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History: CFD1275Q | MM4019 | BTB1424AT3 | 2N2473 | 2N3183 | 2SB1144S | BF420A



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