Биполярный транзистор BUV47B - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BUV47B
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 120 W
Макcимально допустимое напряжение коллектор-база (Ucb): 850 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 450 V
Макcимальный постоянный ток коллектора (Ic): 9 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 5
Корпус транзистора: TOP3
BUV47B Datasheet (PDF)
buv47b.pdf
isc Silicon NPN Power Transistor BUV47BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-:V = 1.5V(Max.)@I = 6ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 220V switch mode power supply, DC and ACmotor control ap
buv47 buv47b.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV47 BUV47B DESCRIPTION With TO-3PN package. High voltage. Very high switching speed. APPLICATIONS Suited for 220V switchmode power supply, DC and AC motor control. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3
bux47 bux47a buv47 buv47a bux47 bux47a buv47fi buv47afi.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I
buv47-a.pdf
BUV47, BUV47ANPN SILICON POWER TRANSISTORS Rugged Triple-Diffused Planar ConstructionSOT-93 PACKAGE(TOP VIEW) 9 A Continuous Collector CurrentB1 1000 Volt Blocking CapabilityC 23EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maximum ratings at 25C case temperature (unless otherwise noted)RATING SYMBOL VALUE UNITBUV47 850Collec
buv47fi.pdf
isc Silicon NPN Power Transistor BUV47FIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-:V = 1.5V(Max.)@I = 6ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 220V switchmode power supply, DC and ACmotor control ap
buv47.pdf
isc Silicon NPN Power Transistor BUV47DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-:V = 1.5V(Max.)@I = 6ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 220V switchmode power supply, DC and ACmotor control appl
buv47afi.pdf
isc Silicon NPN Power Transistor BUV47AFIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-:V = 1.5V(Max.)@I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 220V switch mode power supply, DC and ACmotor control
buv47a.pdf
isc Silicon NPN Power Transistor BUV47ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-:V = 1.5V(Max.)@I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 220V switchmode power supply, DC and ACmotor control app
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050