BUW11 Todos los transistores

 

BUW11 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUW11
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 850 V
   Tensión colector-emisor (Vce): 400 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: TOP3
 
   - Selección ⓘ de transistores por parámetros

 

BUW11 Datasheet (PDF)

 ..1. Size:122K  inchange semiconductor
buw11 buw11a.pdf pdf_icon

BUW11

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW11 BUW11A DESCRIPTION With TO-3PN package High voltage ;high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings

 ..2. Size:213K  inchange semiconductor
buw11.pdf pdf_icon

BUW11

isc Silicon NPN Power Transistor BUW11DESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSConvertersInvertersSwitching regulatorsMotor control systemsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 850 VCBOV Collector-Emitter V

 0.1. Size:72K  philips
buw11f 1.pdf pdf_icon

BUW11

DISCRETE SEMICONDUCTORSDATA SHEETBUW11F; BUW11AFSilicon diffused power transistors1997 Aug 14Product specificationSupersedes data of February 1996File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUW11F; BUW11AFDESCRIPTIONHigh-voltage, high-speed,ook, halfpageglass-passivated NPN powertransistor in

 0.2. Size:79K  philips
buw11w buw11aw 1.pdf pdf_icon

BUW11

DISCRETE SEMICONDUCTORSDATA SHEETBUW11W; BUW11AWSilicon diffused power transistors1997 Aug 14Product specificationFile under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUW11W; BUW11AWDESCRIPTIONHigh-voltage, high-speed,glass-passivated NPN powertransistor in a SOT429 package.eAPPLICATIONS Converte

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top

 


 
.