BUW11 Specs and Replacement

Type Designator: BUW11

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 850 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TOP3

 BUW11 Substitution

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BUW11 datasheet

 ..1. Size:122K  inchange semiconductor

buw11 buw11a.pdf pdf_icon

BUW11

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW11 BUW11A DESCRIPTION With TO-3PN package High voltage ;high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings... See More ⇒

 ..2. Size:213K  inchange semiconductor

buw11.pdf pdf_icon

BUW11

isc Silicon NPN Power Transistor BUW11 DESCRIPTION High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 850 V CBO V Collector-Emitter V... See More ⇒

 0.1. Size:72K  philips

buw11f 1.pdf pdf_icon

BUW11

DISCRETE SEMICONDUCTORS DATA SHEET BUW11F; BUW11AF Silicon diffused power transistors 1997 Aug 14 Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW11F; BUW11AF DESCRIPTION High-voltage, high-speed, ook, halfpage glass-passivated NPN power transistor in... See More ⇒

 0.2. Size:79K  philips

buw11w buw11aw 1.pdf pdf_icon

BUW11

DISCRETE SEMICONDUCTORS DATA SHEET BUW11W; BUW11AW Silicon diffused power transistors 1997 Aug 14 Product specification File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW11W; BUW11AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. e APPLICATIONS Converte... See More ⇒

Detailed specifications: BUV94, BUV95, BUV98, BUV98A, BUV98AV, BUV98BV, BUV98CV, BUV98V, BD335, BUW11A, BUW11AF, BUW11F, BUW12, BUW12A, BUW12AF, BUW12F, BUW13

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