BUW12AF Todos los transistores

 

BUW12AF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUW12AF
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 32 W
   Tensión colector-base (Vcb): 1000 V
   Tensión colector-emisor (Vce): 450 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: ISOTOP3
 

 Búsqueda de reemplazo de BUW12AF

   - Selección ⓘ de transistores por parámetros

 

BUW12AF Datasheet (PDF)

 ..1. Size:216K  inchange semiconductor
buw12af.pdf pdf_icon

BUW12AF

isc Silicon NPN Power Transistor BUW12AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V = 1.5V(Max.)@I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching industrialapplications.ABSO

 8.1. Size:79K  philips
buw12w buw12aw 1.pdf pdf_icon

BUW12AF

DISCRETE SEMICONDUCTORSDATA SHEETBUW12W; BUW12AWSilicon diffused power transistorsProduct specification 1997 Aug 14Supersedes data of December 1991File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUW12W; BUW12AWDESCRIPTIONHigh-voltage, high-speed,glass-passivated NPN powertransistor in a SOT429 packag

 8.2. Size:79K  philips
buw12w buw12aw.pdf pdf_icon

BUW12AF

DISCRETE SEMICONDUCTORSDATA SHEETBUW12W; BUW12AWSilicon diffused power transistorsProduct specification 1997 Aug 14Supersedes data of December 1991File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUW12W; BUW12AWDESCRIPTIONHigh-voltage, high-speed,glass-passivated NPN powertransistor in a SOT429 packag

 8.3. Size:214K  inchange semiconductor
buw12a.pdf pdf_icon

BUW12AF

isc Silicon NPN Power Transistor BUW12ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V = 1.5V(Max.)@I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching industrialapplications.ABSOL

Otros transistores... BUV98CV , BUV98V , BUW11 , BUW11A , BUW11AF , BUW11F , BUW12 , BUW12A , BD135 , BUW12F , BUW13 , BUW131 , BUW131A , BUW131H , BUW132 , BUW132A , BUW132H .

History: UMC5NT1G | 2SC1729 | 40314S

 

 
Back to Top

 


 
.