All Transistors. BUW12AF Datasheet

 

BUW12AF Datasheet and Replacement


   Type Designator: BUW12AF
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 32 W
   Maximum Collector-Base Voltage |Vcb|: 1000 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: ISOTOP3
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BUW12AF Datasheet (PDF)

 ..1. Size:216K  inchange semiconductor
buw12af.pdf pdf_icon

BUW12AF

isc Silicon NPN Power Transistor BUW12AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V = 1.5V(Max.)@I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching industrialapplications.ABSO

 8.1. Size:79K  philips
buw12w buw12aw 1.pdf pdf_icon

BUW12AF

DISCRETE SEMICONDUCTORSDATA SHEETBUW12W; BUW12AWSilicon diffused power transistorsProduct specification 1997 Aug 14Supersedes data of December 1991File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUW12W; BUW12AWDESCRIPTIONHigh-voltage, high-speed,glass-passivated NPN powertransistor in a SOT429 packag

 8.2. Size:79K  philips
buw12w buw12aw.pdf pdf_icon

BUW12AF

DISCRETE SEMICONDUCTORSDATA SHEETBUW12W; BUW12AWSilicon diffused power transistorsProduct specification 1997 Aug 14Supersedes data of December 1991File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUW12W; BUW12AWDESCRIPTIONHigh-voltage, high-speed,glass-passivated NPN powertransistor in a SOT429 packag

 8.3. Size:214K  inchange semiconductor
buw12a.pdf pdf_icon

BUW12AF

isc Silicon NPN Power Transistor BUW12ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V = 1.5V(Max.)@I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching industrialapplications.ABSOL

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: DTC144GKA | KTC2553 | MJ10101 | RT1P44QS | 2SA1370F | NTE2558 | 2N2989

Keywords - BUW12AF transistor datasheet

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