BUW40 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUW40

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 450 V

Tensión colector-emisor (Vce): 300 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO220

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BUW40 datasheet

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 buw40 a b.pdf pdf_icon

BUW40

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW40/A/B DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 300V(Min)- BUW40 = 350V(Min)- BUW40A = 400V(Min)- BUW40B High Switching Speed High Power Dissipation APPLICATIONS Designed for high voltage and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMB

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 buw40 buw40a buw40b.pdf pdf_icon

BUW40

isc Silicon NPN Power Transistors BUW40/A/B DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min)- BUW40 CEO(SUS) = 350V(Min)- BUW40A = 400V(Min)- BUW40B High Switching Speed High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and switching applications. ABSOLUTE MAXIM

Otros transistores... BUW32P, BUW32PFI, BUW34, BUW35, BUW36, BUW37, BUW38, BUW39, TIP32C, BUW40A, BUW40B, BUW41, BUW41A, BUW41B, BUW42, BUW42A, BUW42AP