BUW40 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUW40
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 450 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO220
BUW40 Transistor Equivalent Substitute - Cross-Reference Search
BUW40 Datasheet (PDF)
buw40 a b.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW40/A/B DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- BUW40 = 350V(Min)- BUW40A = 400V(Min)- BUW40B High Switching Speed High Power Dissipation APPLICATIONSDesigned for high voltage and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMB
buw40 buw40a buw40b.pdf
isc Silicon NPN Power Transistors BUW40/A/BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)- BUW40CEO(SUS)= 350V(Min)- BUW40A= 400V(Min)- BUW40BHigh Switching SpeedHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and switching applications.ABSOLUTE MAXIM
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
