BUW40B Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUW40B

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 650 V

Tensión colector-emisor (Vce): 400 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO220

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BUW40B datasheet

 ..1. Size:209K  inchange semiconductor
 buw40 buw40a buw40b.pdf pdf_icon

BUW40B

isc Silicon NPN Power Transistors BUW40/A/B DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min)- BUW40 CEO(SUS) = 350V(Min)- BUW40A = 400V(Min)- BUW40B High Switching Speed High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and switching applications. ABSOLUTE MAXIM

 9.1. Size:145K  inchange semiconductor
 buw40 a b.pdf pdf_icon

BUW40B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW40/A/B DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 300V(Min)- BUW40 = 350V(Min)- BUW40A = 400V(Min)- BUW40B High Switching Speed High Power Dissipation APPLICATIONS Designed for high voltage and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMB

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