BUW40B Datasheet and Replacement
Type Designator: BUW40B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 650 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO220
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BUW40B Datasheet (PDF)
buw40 buw40a buw40b.pdf
isc Silicon NPN Power Transistors BUW40/A/BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)- BUW40CEO(SUS)= 350V(Min)- BUW40A= 400V(Min)- BUW40BHigh Switching SpeedHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and switching applications.ABSOLUTE MAXIM
buw40 a b.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW40/A/B DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- BUW40 = 350V(Min)- BUW40A = 400V(Min)- BUW40B High Switching Speed High Power Dissipation APPLICATIONSDesigned for high voltage and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMB
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N5256
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