BUW40B Specs and Replacement

Type Designator: BUW40B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 650 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO220

 BUW40B Substitution

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BUW40B datasheet

 ..1. Size:209K  inchange semiconductor

 buw40 buw40a buw40b.pdf pdf_icon

BUW40B

isc Silicon NPN Power Transistors BUW40/A/B DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min)- BUW40 CEO(SUS) = 350V(Min)- BUW40A = 400V(Min)- BUW40B High Switching Speed High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and switching applications. ABSOLUTE MAXIM... See More ⇒

 9.1. Size:145K  inchange semiconductor

 buw40 a b.pdf pdf_icon

BUW40B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW40/A/B DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 300V(Min)- BUW40 = 350V(Min)- BUW40A = 400V(Min)- BUW40B High Switching Speed High Power Dissipation APPLICATIONS Designed for high voltage and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMB... See More ⇒

Detailed specifications: BUW34, BUW35, BUW36, BUW37, BUW38, BUW39, BUW40, BUW40A, D882P, BUW41, BUW41A, BUW41B, BUW42, BUW42A, BUW42AP, BUW42APFI, BUW42P

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