BUW50 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUW50

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 250 V

Tensión colector-emisor (Vce): 125 V

Corriente del colector DC máxima (Ic): 40 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 10

Encapsulados: TOP3

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BUW50 datasheet

 ..1. Size:72K  st
 buw50.pdf pdf_icon

BUW50

BUW50 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERATION TURN-ON AND TURN-OFF TAIL SPECIFICATIONS TURN-ON di /dt FOR BETTER RECTIFIER c 3 CHOICE 2 SWITCHING TIMES SPECIFIED WITH AND 1 WITHOUT NEGATIVE BASE DRIVE FAST SWITCHING TIMES TO-218 LOW SWITCHING LOSSES LOW ON-STATE VOLTAGE DROP

 ..2. Size:214K  inchange semiconductor
 buw50.pdf pdf_icon

BUW50

isc Silicon NPN Power Transistor BUW50 DESCRIPTION High Current Capability Fast Switching Speed Low Saturation Voltage and High Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier applications. Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE UNIT Collector-Emitter

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