BUW50 Specs and Replacement

Type Designator: BUW50

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 125 V

Maximum Collector Current |Ic max|: 40 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TOP3

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BUW50 datasheet

 ..1. Size:72K  st

 buw50.pdf pdf_icon

BUW50

BUW50 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERATION TURN-ON AND TURN-OFF TAIL SPECIFICATIONS TURN-ON di /dt FOR BETTER RECTIFIER c 3 CHOICE 2 SWITCHING TIMES SPECIFIED WITH AND 1 WITHOUT NEGATIVE BASE DRIVE FAST SWITCHING TIMES TO-218 LOW SWITCHING LOSSES LOW ON-STATE VOLTAGE DROP ... See More ⇒

 ..2. Size:214K  inchange semiconductor

 buw50.pdf pdf_icon

BUW50

isc Silicon NPN Power Transistor BUW50 DESCRIPTION High Current Capability Fast Switching Speed Low Saturation Voltage and High Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier applications. Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE UNIT Collector-Emitter... See More ⇒

Detailed specifications: BUW42APFI, BUW42P, BUW42PFI, BUW44, BUW45, BUW46, BUW48, BUW49, 2N5551, BUW51, BUW52, BUW52I, BUW57, BUW58, BUW60, BUW60I, BUW61

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