BUW50 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUW50
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 125 V
Maximum Collector Current |Ic max|: 40 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TOP3
BUW50 Transistor Equivalent Substitute - Cross-Reference Search
BUW50 Datasheet (PDF)
buw50.pdf
BUW50SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE VERY LOW SATURATION VOLTAGE ANDHIGH GAIN FOR REDUCED LOADOPERATION TURN-ON AND TURN-OFF TAILSPECIFICATIONS TURN-ON di /dt FOR BETTER RECTIFIERc3CHOICE2 SWITCHING TIMES SPECIFIED WITH AND1WITHOUT NEGATIVE BASE DRIVE FAST SWITCHING TIMESTO-218 LOW SWITCHING LOSSES LOW ON-STATE VOLTAGE DROP
buw50.pdf
isc Silicon NPN Power Transistor BUW50DESCRIPTIONHigh Current CapabilityFast Switching SpeedLow Saturation Voltage and High GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifierapplications.Absolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITCollector-Emitter
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
