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BUW64B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUW64B
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 110 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO220
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BUW64B Datasheet (PDF)

 ..1. Size:211K  inchange semiconductor
 buw64a buw64b buw64c.pdf pdf_icon

BUW64B

isc Silicon NPN Power Transistors BUW64A/BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 90V(Min)- BUW64ACEO(SUS)= 110V(Min)- BUW64B= 130V(Min)- BUW64CHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for converters, inverters, pulse-width-modulatedregulators

 9.1. Size:117K  inchange semiconductor
 buw64a b.pdf pdf_icon

BUW64B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW64A/B DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min)- BUW64A = 110V(Min)- BUW64B = 130V(Min)- BUW64C High Switching Speed Low Saturation Voltage APPLICATIONSDesigned for converters, inverters, pulse-width-modulated regulators and a variety of power swi

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2SD2061 | CL055P | 2SC765 | 2SB443A | 2N5862 | DTC123JEB | NKT108

 

 
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