BUW64B Specs and Replacement

Type Designator: BUW64B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 110 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO220

 BUW64B Substitution

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BUW64B datasheet

 ..1. Size:211K  inchange semiconductor

 buw64a buw64b buw64c.pdf pdf_icon

BUW64B

isc Silicon NPN Power Transistors BUW64A/B DESCRIPTION Collector-Emitter Sustaining Voltage- V = 90V(Min)- BUW64A CEO(SUS) = 110V(Min)- BUW64B = 130V(Min)- BUW64C High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for converters, inverters, pulse-width-modulated regulators ... See More ⇒

 9.1. Size:117K  inchange semiconductor

 buw64a b.pdf pdf_icon

BUW64B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW64A/B DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 90V(Min)- BUW64A = 110V(Min)- BUW64B = 130V(Min)- BUW64C High Switching Speed Low Saturation Voltage APPLICATIONS Designed for converters, inverters, pulse-width-modulated regulators and a variety of power swi... See More ⇒

Detailed specifications: BUW58, BUW60, BUW60I, BUW61, BUW61I, BUW62, BUW62I, BUW64A, 13007, BUW64C, BUW66, BUW67, BUW70, BUW71, BUW72, BUW73, BUW74

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