BUW64B Datasheet, Equivalent, Cross Reference Search
Type Designator: BUW64B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 110 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO220
BUW64B Transistor Equivalent Substitute - Cross-Reference Search
BUW64B Datasheet (PDF)
buw64a buw64b buw64c.pdf
isc Silicon NPN Power Transistors BUW64A/BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 90V(Min)- BUW64ACEO(SUS)= 110V(Min)- BUW64B= 130V(Min)- BUW64CHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for converters, inverters, pulse-width-modulatedregulators
buw64a b.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW64A/B DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min)- BUW64A = 110V(Min)- BUW64B = 130V(Min)- BUW64C High Switching Speed Low Saturation Voltage APPLICATIONSDesigned for converters, inverters, pulse-width-modulated regulators and a variety of power swi
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
