BUX32B Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUX32B

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 1000 V

Tensión colector-emisor (Vce): 500 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO3

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BUX32B datasheet

 ..1. Size:206K  inchange semiconductor
 bux32 bux32a bux32b.pdf pdf_icon

BUX32B

isc Silicon NPN Power Transistors BUX32/A/B DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 400V (Min)-BUX32 CEO(SUS) = 450V (Min)-BUX32A = 450V (Min)-BUX32B Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for off-line power supplies and are also well suited for u

 9.1. Size:76K  inchange semiconductor
 bux32 a b.pdf pdf_icon

BUX32B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX32/A/B DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V (Min)-BUX32 = 450V (Min)-BUX32A = 450V (Min)-BUX32B Low Saturation Voltage APPLICATIONS Designed for off-line power supplies and are also well suited for use in a wide range of invert

Otros transistores... BUX30AVA, BUX30AVB, BUX30AVC, BUX31, BUX31A, BUX31B, BUX32, BUX32A, BD333, BUX33, BUX33A, BUX33B, BUX34, BUX348, BUX348A, BUX348APF, BUX348CPF