BUX32B Datasheet, Equivalent, Cross Reference Search
Type Designator: BUX32B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 500 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
BUX32B Transistor Equivalent Substitute - Cross-Reference Search
BUX32B Datasheet (PDF)
bux32 bux32a bux32b.pdf
isc Silicon NPN Power Transistors BUX32/A/BDESCRIPTION High Switching SpeedCollector-Emitter Sustaining Voltage-: V = 400V (Min)-BUX32CEO(SUS)= 450V (Min)-BUX32A= 450V (Min)-BUX32BLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for off-line power supplies and are also well suitedfor u
bux32 a b.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX32/A/B DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)-BUX32 = 450V (Min)-BUX32A = 450V (Min)-BUX32B Low Saturation Voltage APPLICATIONS Designed for off-line power supplies and are also well suited for use in a wide range of invert
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
