BUX32B Specs and Replacement
Type Designator: BUX32B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 500 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
BUX32B Substitution
BUX32B datasheet
bux32 bux32a bux32b.pdf
isc Silicon NPN Power Transistors BUX32/A/B DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 400V (Min)-BUX32 CEO(SUS) = 450V (Min)-BUX32A = 450V (Min)-BUX32B Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for off-line power supplies and are also well suited for u... See More ⇒
bux32 a b.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX32/A/B DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V (Min)-BUX32 = 450V (Min)-BUX32A = 450V (Min)-BUX32B Low Saturation Voltage APPLICATIONS Designed for off-line power supplies and are also well suited for use in a wide range of invert... See More ⇒
Detailed specifications: BUX30AVA , BUX30AVB , BUX30AVC , BUX31 , BUX31A , BUX31B , BUX32 , BUX32A , BD333 , BUX33 , BUX33A , BUX33B , BUX34 , BUX348 , BUX348A , BUX348APF , BUX348CPF .
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