BUX87 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUX87

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 1000 V

Tensión colector-emisor (Vce): 450 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO126

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BUX87 datasheet

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 bux87.pdf pdf_icon

BUX87

BUX87 High voltage NPN power transistor Features High voltage capability (450 V VCEO) Minimum lot-to-lot spread for reliable operation High DC current gain Applications 1 2 Flyback and forward single transistor low 3 power converters SOT-32 Description The BUX87 is manufactured using high voltage multi-epitaxial planar technology for high Figure 1. Internal s

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 bux86 bux87.pdf pdf_icon

BUX87

 ..3. Size:212K  inchange semiconductor
 bux87.pdf pdf_icon

BUX87

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUX87 DESCRIPTION High Voltage capability V = 450V(Min) CE(sus) Minimum lot-to-lot spread for reliable operation High DC current gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Fly back and Forward single transistor low Power converters

 0.1. Size:43K  philips
 bux87-1100 1.pdf pdf_icon

BUX87

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX87-1100 GENERAL DESCRIPTION High voltage, high speed,low capacitance npn power transistor in a SOT78 envelope intended for use in the dynamic focus circuit of televisions and monitors. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 11

MOSTRAR MÁS

Otros transistores... BUX85, BUX85F, BUX86, BUX86-4, BUX86-5, BUX86-6, BUX86-7, BUX86P, BD139, BUX87-9, BUX87P, BUX88, BUX90, BUX91, BUX92, BUX93, BUX94