BUX87 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUX87
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO126
BUX87 Transistor Equivalent Substitute - Cross-Reference Search
BUX87 Datasheet (PDF)
bux87.pdf
BUX87High voltage NPN power transistorFeatures High voltage capability (450 V VCEO) Minimum lot-to-lot spread for reliable operation High DC current gainApplications12 Flyback and forward single transistor low 3power convertersSOT-32DescriptionThe BUX87 is manufactured using high voltage multi-epitaxial planar technology for high Figure 1. Internal s
bux87.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor BUX87DESCRIPTIONHigh Voltage capability: V = 450V(Min)CE(sus)Minimum lot-to-lot spread for reliable operationHigh DC current gainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFly back and Forward single transistor lowPower converters
bux87-1100 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX87-1100 GENERAL DESCRIPTIONHigh voltage, high speed,low capacitance npn power transistor in a SOT78 envelope intended for use in thedynamic focus circuit of televisions and monitors.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VBE = 0 V - 11
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 2SC3393U | 2SC752GY | BDV47 | BDT61BF | 2SC3318
History: 2SC3393U | 2SC752GY | BDV47 | BDT61BF | 2SC3318
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