C103 Todos los transistores

 

C103 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: C103

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-emisor (Vce): 6 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 0.6 MHz

Capacitancia de salida (Cc): 75 pF

Ganancia de corriente contínua (hfe): 15

Empaquetado / Estuche: TO5

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C103 Datasheet (PDF)

1.1. dmc1030ufdb.pdf Size:347K _diodes

C103
C103

DMC1030UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features ID MAX • Low On-Resistance Device V(BR)DSS RDS(ON) max TA = +25°C • Low Input Capacitance • Low Profile, 0.6mm Max Height 34mΩ @ VGS = 4.5V 5.1A • ESD Protected Gate 40mΩ @ VGS = 2.5V 4.7A Q1 12V • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) N-Channel 50mΩ @ VGS

1.2. 2sc1034.pdf Size:453K _sony

C103



 1.3. 2sc1030.pdf Size:44K _jmnic

C103

Power Transistors www.jmnic.com 2SC1030 Silicon NPN Transistors 1B 2E 3C Features With TO-3 package Low frequency power amplifications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IC Collector current-Continuous 6 A PD Total Power Dissipation@TC

1.4. 2sc1034.pdf Size:181K _inchange_semiconductor

C103
C103

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1034 DESCRIPTION ·DC Current Gain -h = 4(Min)@ I = 0.75A FE C ·Collector-Emitter Sustaining Voltage- : V = 700V(Min) CEO(SUS) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM

 1.5. mmbtrc101ss mmbtrc102ss mmbtrc103ss mmbtrc104ss mmbtrc105ss mmbtrc106ss.pdf Size:106K _diotec

C103
C103

MMBTRC101SS ... MMBTRC106SS MMBTRC101SS ... MMBTRC106SS Surface Mount Bias Resistor Transistors NPN NPN SMD Transistoren mit Eingangsspannungsteiler Version 2011-02-10 Power dissipation – Verlustleistung 200 mW ±0.1 1.1 2.9 Plastic case SOT-23 0.4 3 Kunststoffgehäuse (TO-236) Type Weight approx. – Gewicht ca. 0.01 g Code 1 2 Plastic material has UL classification 94V-

Otros transistores... C1 , C100 , C1001 , C1002 , C1003 , C1004 , C101 , C102 , 2N5088 , C106 , C112 , C1-12 , C118 , C119 , C12-28 , C1-28 , C150 .

 

 
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