C103 - описание и поиск аналогов

 0.1. Size:347K  diodes
 dmc1030ufdb.pdf 

DMC1030UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features ID MAX Low On-Resistance Device V(BR)DSS RDS(ON) max TA = +25 C Low Input Capacitance Low Profile, 0.6mm Max Height 34m @ VGS = 4.5V 5.1A ESD Protected Gate 40m @ VGS = 2.5V 4.7A Q1 12V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) N-Channel 50m @ VGS

 0.2. Size:453K  sony
 2sc1034.pdf 

 0.3. Size:44K  jmnic
 2sc1030.pdf 

Power Transistors www.jmnic.com 2SC1030 Silicon NPN Transistors 1B 2E 3C Features With TO-3 package Low frequency power amplifications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IC Collector current-Continuous 6 A PD Total Power Dissipation@TC

 0.4. Size:391K  kec
 krc101s krc102s krc103s krc104s krc105s krc106s.pdf 

SEMICONDUCTOR KRC101S KRC106S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E L B L FEATURES DIM MILLIMETERS With Built-in Bias Resistors. _ + A 2.93 0.20 B 1.30+0.20/-0.15 Simplify Circuit Design. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30/

 0.5. Size:106K  diotec
 mmbtrc101ss mmbtrc102ss mmbtrc103ss mmbtrc104ss mmbtrc105ss mmbtrc106ss.pdf 

MMBTRC101SS ... MMBTRC106SS MMBTRC101SS ... MMBTRC106SS Surface Mount Bias Resistor Transistors NPN NPN SMD Transistoren mit Eingangsspannungsteiler Version 2011-02-10 Power dissipation Verlustleistung 200 mW 0.1 1.1 2.9 Plastic case SOT-23 0.4 3 Kunststoffgeh use (TO-236) Type Weight approx. Gewicht ca. 0.01 g Code 1 2 Plastic material has UL classification 94V-

 0.6. Size:1260K  jiejie micro
 jvc103k.pdf 

100V, 169A, 3.2m N-channel Power SGT MOSFET JVC103K Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 169 A Applications RDS(ON)_Typ(@VGS=10V 3.2 mW Load Switch PWM Application Power Management D G S TO-22

 0.7. Size:615K  jiejie micro
 jvc103t.pdf 

JVC103T 100V 3.2mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% Rg Tested 100% UIS Tested, 100% RgTested ID (@ VGS = 10V) (1) 197 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.2 mW

 0.8. Size:181K  inchange semiconductor
 2sc1034.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1034 DESCRIPTION DC Current Gain -h = 4(Min)@ I = 0.75A FE C Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM