C112 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: C112
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 25 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 0.7 MHz
Capacitancia de salida (Cc): 50 pF
Ganancia de corriente contínua (hfe): 18
Búsqueda de reemplazo de transistor bipolar C112
C112 Datasheet (PDF)
1.1. fc112.pdf 
Size:49K _sanyo
Ordering number:EN3080 FC112 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features Package Dimensions On-chip bias resistors (R1=22k? , R2=22k? ) unit:mm Composite type with 2 transistors contained in the 2066 CP package currently in use, improving the mount- [FC112] ing efficiency greatly. The FC112 is formed with two chips, being equiva- lent to
1.2. 2sc1122a.pdf Size:191K _no
1.3. dtc101-dtc108 dtc110-dtc112 dtc114 dtc117 dtc123 dtc124.pdf Size:282K _first_silicon
DTC 101 ~ 108 SEMICONDUCTOR DTC 110 ~ 112 / 114 /117 TECHNICAL DATA DTC 123 / 124 Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor 3 Transistor) contains a single transistor with a monolithic bi
Otros transistores... C1001 , C1002 , C1003 , C1004 , C101 , C102 , C103 , C106 , 2SA1015 , C1-12 , C118 , C119 , C12-28 , C1-28 , C150 , C155 , C155P .
