C112 Specs and Replacement
Type Designator: C112
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 0.7 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 18
Noise Figure, dB: -
C112 Substitution
- BJT ⓘ Cross-Reference Search
C112 datasheet
Ordering number EN3080 FC112 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features Package Dimensions On-chip bias resistors (R1=22k , R2=22k ) unit mm Composite type with 2 transistors contained in the 2066 CP package currently in use, improving the mount- [FC112] ing efficiency greatly. The FC112 is formed with two chips, being equiva-... See More ⇒
BSC112N06LD MOSFET PG-TDSON-8-4 OptiMOSTM-T2 Power Transistor, 60 V 8 1 7 Features 2 6 3 5 4 Dual N-channel, Logic level Fast switching MOSFETs for SMPS Optimized technology for Synchronous Rectification Pb-free plating; RoHS compliant 1 8 2 7 100% Avalanche tested 3 6 5 4 Superior Thermal Resistance Halogen-free according to IEC61249-2-21 Product Va... See More ⇒
dtc101-dtc108 dtc110-dtc112 dtc114 dtc117 dtc123 dtc124.pdf 
DTC 101 108 SEMICONDUCTOR DTC 110 112 / 114 /117 TECHNICAL DATA DTC 123 / 124 Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor 3 Transistor) contains a single transistor with a monolithic bi... See More ⇒
Detailed specifications: C1001 , C1002 , C1003 , C1004 , C101 , C102 , C103 , C106 , D965 , C1-12 , C118 , C119 , C12-28 , C1-28 , C150 , C155 , C155P .
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