C112 Datasheet, Equivalent, Cross Reference Search
Type Designator: C112
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 0.7 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 18
Noise Figure, dB: -
C112 Transistor Equivalent Substitute - Cross-Reference Search
C112 Datasheet (PDF)
fc112.pdf
Ordering number:EN3080FC112NPN Epitaxial Planar Silicon Composite TransistorSwitching ApplicationsFeatures Package Dimensions On-chip bias resistors (R1=22k , R2=22k )unit:mm Composite type with 2 transistors contained in the2066CP package currently in use, improving the mount-[FC112]ing efficiency greatly. The FC112 is formed with two chips, being equiva-
bsc112n06ld.pdf
BSC112N06LDMOSFETPG-TDSON-8-4OptiMOSTM-T2 Power Transistor, 60 V8 17Features 26354 Dual N-channel, Logic level Fast switching MOSFETs for SMPS Optimized technology for Synchronous Rectification Pb-free plating; RoHS compliant182 7 100% Avalanche tested3 654 Superior Thermal Resistance Halogen-free according to IEC61249-2-21Product Va
dtc101-dtc108 dtc110-dtc112 dtc114 dtc117 dtc123 dtc124.pdf
DTC 101 ~ 108SEMICONDUCTORDTC 110 ~ 112 / 114 /117TECHNICAL DATADTC 123 / 124Bias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistor3Transistor) contains a single transistor with a monolithic bi
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
