All Transistors. C112 Datasheet

 

C112 Datasheet, Equivalent, Cross Reference Search

Type Designator: C112

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 0.7 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 18

Noise Figure, dB: -

C112 Transistor Equivalent Substitute - Cross-Reference Search

 

C112 Datasheet (PDF)

1.1. fc112.pdf Size:49K _sanyo

C112
C112

Ordering number:EN3080 FC112 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features Package Dimensions On-chip bias resistors (R1=22k? , R2=22k? ) unit:mm Composite type with 2 transistors contained in the 2066 CP package currently in use, improving the mount- [FC112] ing efficiency greatly. The FC112 is formed with two chips, being equiva- lent to

1.2. 2sc1122a.pdf Size:191K _no

C112
C112

 1.3. dtc101-dtc108 dtc110-dtc112 dtc114 dtc117 dtc123 dtc124.pdf Size:282K _first_silicon

C112
C112

DTC 101 ~ 108 SEMICONDUCTOR DTC 110 ~ 112 / 114 /117 TECHNICAL DATA DTC 123 / 124 Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor 3 Transistor) contains a single transistor with a monolithic bi

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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