C112 Datasheet and Replacement
Type Designator: C112
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 0.7 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 18
Noise Figure, dB: -
C112 Substitution
C112 Datasheet (PDF)
fc112.pdf

Ordering number:EN3080FC112NPN Epitaxial Planar Silicon Composite TransistorSwitching ApplicationsFeatures Package Dimensions On-chip bias resistors (R1=22k , R2=22k )unit:mm Composite type with 2 transistors contained in the2066CP package currently in use, improving the mount-[FC112]ing efficiency greatly. The FC112 is formed with two chips, being equiva-
bsc112n06ld.pdf

BSC112N06LDMOSFETPG-TDSON-8-4OptiMOSTM-T2 Power Transistor, 60 V8 17Features 26354 Dual N-channel, Logic level Fast switching MOSFETs for SMPS Optimized technology for Synchronous Rectification Pb-free plating; RoHS compliant182 7 100% Avalanche tested3 654 Superior Thermal Resistance Halogen-free according to IEC61249-2-21Product Va
dtc101-dtc108 dtc110-dtc112 dtc114 dtc117 dtc123 dtc124.pdf

DTC 101 ~ 108SEMICONDUCTORDTC 110 ~ 112 / 114 /117TECHNICAL DATADTC 123 / 124Bias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistor3Transistor) contains a single transistor with a monolithic bi
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: CT5611 | CSC1398A | CSD1616 | 2SC3219 | MA0404-2 | DSC5501 | 2SB1035
Keywords - C112 transistor datasheet
C112 cross reference
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History: CT5611 | CSC1398A | CSD1616 | 2SC3219 | MA0404-2 | DSC5501 | 2SB1035



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