C118 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number:EN3116FC118NPN Epitaxial Planar Silicon Composite TransistorLow-FrequencyGeneral-Purpose Amp ApplicationsFeatures Package Dimensions Composite type with 2 transistors contained in theunit:mmCP package currently in use, improving the mount-2067ing efficiency greatly.[FC118] The FC118 is formed with two chips, being equiva-lent to the 2SC4577, place

KSC1187TV 1st, 2nd Picture IF Amplifier(Forward AGC) High Current Gain Bandwidth Product : fT=700MHz High Power Gain : GPE=24dB (TYP.) at f=45MHzTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 20

BSC118N10NS GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 11.8mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 71 AD Very low on-resistance RDS(on) 150 C operating temperaturePG-TDSON-8 Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ide

Transistors2SC1187

SEMICONDUCTORDTC118TECHNICAL DATANPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkOUT Applications Inverter, Interface, DriverGND Features IN1) Built-in bias resistors enable the configuration of anSOT-23inverter circuit without connecting external inputresistors (see equivalent circuit). 2) The bias resistors consist of thin-film resi

MMBTRC116SS ... MMBTRC121SSMMBTRC116SS ... MMBTRC121SSSurface Mount Bias Resistor TransistorsNPN NPNSMD Transistoren mit EingangsspannungsteilerVersion 2011-02-28Power dissipation Verlustleistung 200 mW 0.11.1 2.9Plastic case SOT-230.4 3Kunststoffgehuse (TO-236)TypeWeight approx. Gewicht ca. 0.01 gCode1 2Plastic material has UL classification 94V-

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1185DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol