C118 Todos los transistores

 0.1. Size:76K  sanyo
 fc118.pdf

Ordering number EN3116 FC118 NPN Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp Applications Features Package Dimensions Composite type with 2 transistors contained in the unit mm CP package currently in use, improving the mount- 2067 ing efficiency greatly. [FC118] The FC118 is formed with two chips, being equiva- lent to the 2SC4577, place

 0.2. Size:48K  fairchild semi
 ksc1187.pdf

KSC1187 TV 1st, 2nd Picture IF Amplifier (Forward AGC) High Current Gain Bandwidth Product fT=700MHz High Power Gain GPE=24dB (TYP.) at f=45MHz TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20

 0.3. Size:439K  infineon
 bsc118n10ns8 bsc118n10nsg.pdf

BSC118N10NS G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 11.8 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 71 A D Very low on-resistance R DS(on) 150 C operating temperature PG-TDSON-8 Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ide

 0.4. Size:73K  usha
 2sc1187.pdf

Transistors 2SC1187

 0.5. Size:123K  gdr
 bsy34 sc116 sc117 sc118 sc119 sc206 sc207 sc236 sc237 sc238 sc239 sc307 sc308 sc309.pdf

 0.6. Size:438K  first silicon
 dtc118.pdf

SEMICONDUCTOR DTC118 TECHNICAL DATA NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network OUT Applications Inverter, Interface, Driver GND Features IN 1) Built-in bias resistors enable the configuration of an SOT-23 inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resi

 0.7. Size:105K  diotec
 mmbtrc116ss mmbtrc117ss mmbtrc118ss mmbtrc119ss mmbtrc120ss mmbtrc121ss.pdf

MMBTRC116SS ... MMBTRC121SS MMBTRC116SS ... MMBTRC121SS Surface Mount Bias Resistor Transistors NPN NPN SMD Transistoren mit Eingangsspannungsteiler Version 2011-02-28 Power dissipation Verlustleistung 200 mW 0.1 1.1 2.9 Plastic case SOT-23 0.4 3 Kunststoffgeh use (TO-236) Type Weight approx. Gewicht ca. 0.01 g Code 1 2 Plastic material has UL classification 94V-

 0.8. Size:175K  inchange semiconductor
 2sc1185.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1185 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol