Справочник транзисторов. C118

 

Биполярный транзистор C118 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: C118
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.25 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 12 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.05 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 1 MHz
   Ёмкость коллекторного перехода (Cc): 50 pf
   Статический коэффициент передачи тока (hfe): 15
   Корпус транзистора: TO5

 Аналоги (замена) для C118

 

 

C118 Datasheet (PDF)

 0.1. Size:76K  sanyo
fc118.pdf

C118
C118

Ordering number:EN3116FC118NPN Epitaxial Planar Silicon Composite TransistorLow-FrequencyGeneral-Purpose Amp ApplicationsFeatures Package Dimensions Composite type with 2 transistors contained in theunit:mmCP package currently in use, improving the mount-2067ing efficiency greatly.[FC118] The FC118 is formed with two chips, being equiva-lent to the 2SC4577, place

 0.2. Size:48K  fairchild semi
ksc1187.pdf

C118
C118

KSC1187TV 1st, 2nd Picture IF Amplifier(Forward AGC) High Current Gain Bandwidth Product : fT=700MHz High Power Gain : GPE=24dB (TYP.) at f=45MHzTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 20

 0.3. Size:439K  infineon
bsc118n10ns8 bsc118n10nsg.pdf

C118
C118

BSC118N10NS GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 11.8mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 71 AD Very low on-resistance RDS(on) 150 C operating temperaturePG-TDSON-8 Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ide

 0.4. Size:73K  usha
2sc1187.pdf

C118
C118

Transistors2SC1187

 0.6. Size:438K  first silicon
dtc118.pdf

C118
C118

SEMICONDUCTORDTC118TECHNICAL DATANPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkOUT Applications Inverter, Interface, DriverGND Features IN1) Built-in bias resistors enable the configuration of anSOT-23inverter circuit without connecting external inputresistors (see equivalent circuit). 2) The bias resistors consist of thin-film resi

 0.7. Size:105K  diotec
mmbtrc116ss mmbtrc117ss mmbtrc118ss mmbtrc119ss mmbtrc120ss mmbtrc121ss.pdf

C118
C118

MMBTRC116SS ... MMBTRC121SSMMBTRC116SS ... MMBTRC121SSSurface Mount Bias Resistor TransistorsNPN NPNSMD Transistoren mit EingangsspannungsteilerVersion 2011-02-28Power dissipation Verlustleistung 200 mW 0.11.1 2.9Plastic case SOT-230.4 3Kunststoffgehuse (TO-236)TypeWeight approx. Gewicht ca. 0.01 gCode1 2Plastic material has UL classification 94V-

 0.8. Size:175K  inchange semiconductor
2sc1185.pdf

C118
C118

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1185DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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