C118 Specs and Replacement
Type Designator: C118
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 12 V
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO5
C118 Substitution
- BJT ⓘ Cross-Reference Search
C118 datasheet
Ordering number EN3116 FC118 NPN Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp Applications Features Package Dimensions Composite type with 2 transistors contained in the unit mm CP package currently in use, improving the mount- 2067 ing efficiency greatly. [FC118] The FC118 is formed with two chips, being equiva- lent to the 2SC4577, place... See More ⇒
KSC1187 TV 1st, 2nd Picture IF Amplifier (Forward AGC) High Current Gain Bandwidth Product fT=700MHz High Power Gain GPE=24dB (TYP.) at f=45MHz TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 ... See More ⇒
BSC118N10NS G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 11.8 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 71 A D Very low on-resistance R DS(on) 150 C operating temperature PG-TDSON-8 Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ide... See More ⇒
Detailed specifications: C1003, C1004, C101, C102, C103, C106, C112, C1-12, TIP2955, C119, C12-28, C1-28, C150, C155, C155P, C166, C166P
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