C118 Datasheet, Equivalent, Cross Reference Search
Type Designator: C118
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 12 V
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO5
C118 Transistor Equivalent Substitute - Cross-Reference Search
C118 Datasheet (PDF)
fc118.pdf
Ordering number:EN3116FC118NPN Epitaxial Planar Silicon Composite TransistorLow-FrequencyGeneral-Purpose Amp ApplicationsFeatures Package Dimensions Composite type with 2 transistors contained in theunit:mmCP package currently in use, improving the mount-2067ing efficiency greatly.[FC118] The FC118 is formed with two chips, being equiva-lent to the 2SC4577, place
ksc1187.pdf
KSC1187TV 1st, 2nd Picture IF Amplifier(Forward AGC) High Current Gain Bandwidth Product : fT=700MHz High Power Gain : GPE=24dB (TYP.) at f=45MHzTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 20
bsc118n10ns8 bsc118n10nsg.pdf
BSC118N10NS GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 11.8mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 71 AD Very low on-resistance RDS(on) 150 C operating temperaturePG-TDSON-8 Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ide
bsy34 sc116 sc117 sc118 sc119 sc206 sc207 sc236 sc237 sc238 sc239 sc307 sc308 sc309.pdf
dtc118.pdf
SEMICONDUCTORDTC118TECHNICAL DATANPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkOUT Applications Inverter, Interface, DriverGND Features IN1) Built-in bias resistors enable the configuration of anSOT-23inverter circuit without connecting external inputresistors (see equivalent circuit). 2) The bias resistors consist of thin-film resi
mmbtrc116ss mmbtrc117ss mmbtrc118ss mmbtrc119ss mmbtrc120ss mmbtrc121ss.pdf
MMBTRC116SS ... MMBTRC121SSMMBTRC116SS ... MMBTRC121SSSurface Mount Bias Resistor TransistorsNPN NPNSMD Transistoren mit EingangsspannungsteilerVersion 2011-02-28Power dissipation Verlustleistung 200 mW 0.11.1 2.9Plastic case SOT-230.4 3Kunststoffgehuse (TO-236)TypeWeight approx. Gewicht ca. 0.01 gCode1 2Plastic material has UL classification 94V-
2sc1185.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1185DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
