C119
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: C119
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25
W
Tensión colector-base (Vcb): 12
V
Tensión colector-emisor (Vce): 6
V
Corriente del colector DC máxima (Ic): 0.05
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1
MHz
Capacitancia de salida (Cc): 50
pF
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta:
TO5
Búsqueda de reemplazo de transistor bipolar C119
C119
Datasheet (PDF)
0.1. Size:166K sanyo
fc119.pdf
Ordering number:EN3061AFC119NPN Epitaxial Planar Silicon TransistorHigh-Frequency General-Purpose Amp, Differential Amp ApplicationsFeatures Package Dimensions Composite type with 2 transistors contained in theunit:mmCP package currently in use, improving the mount-2068ing efficiency greatly.[FC119] The FC119 is formed with two chips, being equiva-lent to the 2SC
0.3. Size:142K jmnic
2sc1195.pdf
JMnic Product SpecificationSilicon NPN Power Transistors 2SC1195 DESCRIPTION With TO-3 package High power dissipation Low collector saturation voltage APPLICATIONS For line operated audio output amplifier and switching power supply drivers applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 Collector Fig.1 simplified outline (TO-3) and symbol Ab
0.4. Size:349K kec
krc119s.pdf
SEMICONDUCTOR KRC119STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONFEATURESEWith Built-in Bias Resistors. L B LDIM MILLIMETERSSimplify Circuit Design._+A 2.93 0.20B 1.30+0.20/-0.15Reduce a Quantity of Parts and Manufacturing Process.C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G
0.6. Size:207K first silicon
dtc119.pdf
SEMICONDUCTORDTC119TECHNICAL DATANPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver Features OUT1) Built-in bias resistors enable the configuration of aninverter circuit without connecting external inputGNDresistors (see equivalent circuit). IN2) The bias resistors consist of thin-film resistors wi
0.7. Size:105K diotec
mmbtrc116ss mmbtrc117ss mmbtrc118ss mmbtrc119ss mmbtrc120ss mmbtrc121ss.pdf
MMBTRC116SS ... MMBTRC121SSMMBTRC116SS ... MMBTRC121SSSurface Mount Bias Resistor TransistorsNPN NPNSMD Transistoren mit EingangsspannungsteilerVersion 2011-02-28Power dissipation Verlustleistung 200 mW 0.11.1 2.9Plastic case SOT-230.4 3Kunststoffgehuse (TO-236)TypeWeight approx. Gewicht ca. 0.01 gCode1 2Plastic material has UL classification 94V-
0.8. Size:175K inchange semiconductor
2sc1195.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1195DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.