C119 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: C119
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 12 V
Tensión colector-emisor (Vce): 6 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 1 MHz
Capacitancia de salida (Cc): 50 pF
Ganancia de corriente contínua (hFE): 25
Encapsulados: TO5
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C119 datasheet
fc119.pdf
Ordering number EN3061A FC119 NPN Epitaxial Planar Silicon Transistor High-Frequency General-Purpose Amp, Differential Amp Applications Features Package Dimensions Composite type with 2 transistors contained in the unit mm CP package currently in use, improving the mount- 2068 ing efficiency greatly. [FC119] The FC119 is formed with two chips, being equiva- lent to the 2SC
2sc1195.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1195 DESCRIPTION With TO-3 package High power dissipation Low collector saturation voltage APPLICATIONS For line operated audio output amplifier and switching power supply drivers applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Ab
krc119s.pdf
SEMICONDUCTOR KRC119S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES E With Built-in Bias Resistors. L B L DIM MILLIMETERS Simplify Circuit Design. _ + A 2.93 0.20 B 1.30+0.20/-0.15 Reduce a Quantity of Parts and Manufacturing Process. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G
Otros transistores... C1004 , C101 , C102 , C103 , C106 , C112 , C1-12 , C118 , BC549 , C12-28 , C1-28 , C150 , C155 , C155P , C166 , C166P , C168 .
History: C1-12
History: C1-12
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