C119 Todos los transistores

 

C119 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: C119

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 12 V

Tensión colector-emisor (Vce): 6 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1 MHz

Capacitancia de salida (Cc): 50 pF

Ganancia de corriente contínua (hFE): 25

Encapsulados: TO5

 Búsqueda de reemplazo de C119

- Selecciónⓘ de transistores por parámetros

 

C119 datasheet

 0.1. Size:166K  sanyo
fc119.pdf pdf_icon

C119

Ordering number EN3061A FC119 NPN Epitaxial Planar Silicon Transistor High-Frequency General-Purpose Amp, Differential Amp Applications Features Package Dimensions Composite type with 2 transistors contained in the unit mm CP package currently in use, improving the mount- 2068 ing efficiency greatly. [FC119] The FC119 is formed with two chips, being equiva- lent to the 2SC

 0.2. Size:635K  infineon
bsc119n03s g.pdf pdf_icon

C119

% ! % D # A0

 0.3. Size:142K  jmnic
2sc1195.pdf pdf_icon

C119

JMnic Product Specification Silicon NPN Power Transistors 2SC1195 DESCRIPTION With TO-3 package High power dissipation Low collector saturation voltage APPLICATIONS For line operated audio output amplifier and switching power supply drivers applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Ab

 0.4. Size:349K  kec
krc119s.pdf pdf_icon

C119

SEMICONDUCTOR KRC119S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES E With Built-in Bias Resistors. L B L DIM MILLIMETERS Simplify Circuit Design. _ + A 2.93 0.20 B 1.30+0.20/-0.15 Reduce a Quantity of Parts and Manufacturing Process. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G

Otros transistores... C1004 , C101 , C102 , C103 , C106 , C112 , C1-12 , C118 , BC549 , C12-28 , C1-28 , C150 , C155 , C155P , C166 , C166P , C168 .

History: C1-12

 

 

 


History: C1-12

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550

 

 

 

Popular searches

bc547 transistor equivalent | 2sa1943 | tip41c datasheet | mje15032 | tip32c datasheet | mje15032g | irf1404 | bc550

 

 

↑ Back to Top
.