C119 Transistor. Datasheet pdf. Equivalent
Type Designator: C119
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 12 V
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO5
C119 Transistor Equivalent Substitute - Cross-Reference Search
C119 Datasheet (PDF)
1.1. bsy34_sc116_sc117_sc118_sc119_sc206_sc207_sc236_sc237_sc238_sc239_sc307_sc308_sc309.pdf 
Size:123K _update

1.2. fc119.pdf Size:166K _sanyo
Ordering number:EN3061A FC119 NPN Epitaxial Planar Silicon Transistor High-Frequency General-Purpose Amp, Differential Amp Applications Features Package Dimensions · Composite type with 2 transistors contained in the unit:mm CP package currently in use, improving the mount- 2068 ing efficiency greatly. [FC119] · The FC119 is formed with two chips, being equiva- lent to the 2SC2814,
1.3. bsc119n03s_rev1.91_g.pdf Size:635K _infineon
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#<:/?.> %?88, 1.4. 2sc1195.pdf
JMnic Product Specification
Silicon NPN Power Transistors 2SC1195
DESCRIPTION
·With TO-3 package
·High power dissipation
·Low collector saturation voltage
APPLICATIONS
·For line operated audio output amplifier and
switching power supply drivers applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector Fig.1 simplified outline (TO-3) and symbol
Absol 1.5. krc119m.pdf
SEMICONDUCTOR KRC116M~KRC122M
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
B
FEATURES
·With Built-in Bias Resistors.
DIM MILLIMETERS
O
·Simplify Circuit Design.
A 3.20 MAX
H
M B 4.30 MAX
·Reduce a Quantity of Parts and Manufacturing Process.
C 0.55 MAX
_
D 2.40 + 0.15
E 1.27
F 2.30
C
_
+
G 14.00 0.50 1.6. krc119s.pdf
SEMICONDUCTOR KRC119S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
FEATURES
E
·With Built-in Bias Resistors. L B L
DIM MILLIMETERS
·Simplify Circuit Design.
_
+
A 2.93 0.20
B 1.30+0.20/-0.15
·Reduce a Quantity of Parts and Manufacturing Process.
C 1.30 MAX
2
3 D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G 1.9 1.7. 2sc1195.pdf
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1195
DESCRIPTION Ў¤ With TO-3 package Ў¤ High power dissipation Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For line operated audio output amplifier and switching power supply drivers applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol D 1.8. dtc119.pdf
SEMICONDUCTOR
DTC119
TECHNICAL DATA
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
OUT
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
GND
resistors (see equivalent circuit).
IN
2) The bias resistors consist of thin-film resistors wi Size:142K _jmnic
Size:437K _kec
Size:349K _kec
Size:113K _inchange_semiconductor
Size:207K _first_silicon
Datasheet: C1004 , C101 , C102 , C103 , C106 , C112 , C1-12 , C118 , 2SC1740 , C12-28 , C1-28 , C150 , C155 , C155P , C166 , C166P , C168 .
LIST
Last Update
BJT: 2SB1308-R | 2SB1308-Q | 2SB1308-P | 2SB1302T-TD-E | 2SB1302S-TD-E | 2SB1260-R | 2SB1260-Q | 2SB1260-P | 2SB1216T-TL-H | 2SB1216T-TL-E | 2SB1216T-H | 2SB1216T-E | 2SB1216S-TL-H | 2SB1216S-TL-E | 2SB1216S-H | 2SB1216S-E | 2SB1205T-TL-E | 2SB1205S-TL-E | 2SB1204T-TL-E | 2SB1204T-E |