C119 Datasheet, Equivalent, Cross Reference Search
Type Designator: C119
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 12 V
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO5
C119 Transistor Equivalent Substitute - Cross-Reference Search
C119 Datasheet (PDF)
fc119.pdf
Ordering number:EN3061AFC119NPN Epitaxial Planar Silicon TransistorHigh-Frequency General-Purpose Amp, Differential Amp ApplicationsFeatures Package Dimensions Composite type with 2 transistors contained in theunit:mmCP package currently in use, improving the mount-2068ing efficiency greatly.[FC119] The FC119 is formed with two chips, being equiva-lent to the 2SC
2sc1195.pdf
JMnic Product SpecificationSilicon NPN Power Transistors 2SC1195 DESCRIPTION With TO-3 package High power dissipation Low collector saturation voltage APPLICATIONS For line operated audio output amplifier and switching power supply drivers applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 Collector Fig.1 simplified outline (TO-3) and symbol Ab
krc119s.pdf
SEMICONDUCTOR KRC119STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONFEATURESEWith Built-in Bias Resistors. L B LDIM MILLIMETERSSimplify Circuit Design._+A 2.93 0.20B 1.30+0.20/-0.15Reduce a Quantity of Parts and Manufacturing Process.C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G
bsy34 sc116 sc117 sc118 sc119 sc206 sc207 sc236 sc237 sc238 sc239 sc307 sc308 sc309.pdf
dtc119.pdf
SEMICONDUCTORDTC119TECHNICAL DATANPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver Features OUT1) Built-in bias resistors enable the configuration of aninverter circuit without connecting external inputGNDresistors (see equivalent circuit). IN2) The bias resistors consist of thin-film resistors wi
mmbtrc116ss mmbtrc117ss mmbtrc118ss mmbtrc119ss mmbtrc120ss mmbtrc121ss.pdf
MMBTRC116SS ... MMBTRC121SSMMBTRC116SS ... MMBTRC121SSSurface Mount Bias Resistor TransistorsNPN NPNSMD Transistoren mit EingangsspannungsteilerVersion 2011-02-28Power dissipation Verlustleistung 200 mW 0.11.1 2.9Plastic case SOT-230.4 3Kunststoffgehuse (TO-236)TypeWeight approx. Gewicht ca. 0.01 gCode1 2Plastic material has UL classification 94V-
2sc1195.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1195DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
