CD9000 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CD9000  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 8 pF

Ganancia de corriente contínua (hFE): 75

Encapsulados: TO92

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CD9000 datasheet

 9.1. Size:608K  fairchild semi
 fcd900n60z.pdf pdf_icon

CD9000

December 2013 FCD900N60Z N-Channel SuperFET II MOSFET 600 V, 4.5 A, 900 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 820 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 13 nC) and lo

 9.2. Size:849K  onsemi
 fcd900n60z.pdf pdf_icon

CD9000

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... CD5916, CD5918, CD5919, CD5919A, CD5944, CD5945, CD6105, CD6105A, TIP127, CD91, CD912, CD92, CD922, CD93, CD932, CD94, CD942