CD9000 Datasheet. Specs and Replacement
Type Designator: CD9000 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Package: TO92
CD9000 Substitution
- BJT ⓘ Cross-Reference Search
CD9000 datasheet
December 2013 FCD900N60Z N-Channel SuperFET II MOSFET 600 V, 4.5 A, 900 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 820 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 13 nC) and lo... See More ⇒
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: CD5916, CD5918, CD5919, CD5919A, CD5944, CD5945, CD6105, CD6105A, TIP127, CD91, CD912, CD92, CD922, CD93, CD932, CD94, CD942
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