CD9000 Datasheet and Replacement
Type Designator: CD9000
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: TO92
CD9000 Transistor Equivalent Substitute - Cross-Reference Search
CD9000 Datasheet (PDF)
fcd900n60z.pdf
December 2013 FCD900N60Z N-Channel SuperFET II MOSFET 600 V, 4.5 A, 900 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 820 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 13 nC) and lo... See More ⇒
fcd900n60z.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Datasheet: CD5916 , CD5918 , CD5919 , CD5919A , CD5944 , CD5945 , CD6105 , CD6105A , TIP127 , CD91 , CD912 , CD92 , CD922 , CD93 , CD932 , CD94 , CD942 .
History: BFV61 | CD9011D | 2SD1406G | KTC3199-Y | BFQ88B | RN2972HFE | L9012SLT3G
Keywords - CD9000 transistor datasheet
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History: BFV61 | CD9011D | 2SD1406G | KTC3199-Y | BFQ88B | RN2972HFE | L9012SLT3G
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