CI2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CI2 📄📄

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Encapsulados: TO72

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CI2 datasheet

0.1. Size:423K 1
ci20t120p.pdf pdf_icon

CI20T120P 20A1200V Field Stop Trench IGBT Features Outline Positive temperature Co-efficient for easy parallel operation. TO-3P High current capability. High input impedance. 0.543(13.8) 0.197(5.00) 0.528(13.4) Suffix "G" indicates Halogen-free part, ex.CI20T120PG. 0.181(4.60) 0.065(1.65) 0.386(9.8) 0.057(1.45) 0.370(9.4) 0.219(5.55) 0.130(3.3) 0.203(5.15

0.2. Size:598K fairchild semi
fci25n60n.pdf pdf_icon

November 2013 FCI25N60N N-Channel SupreMOS MOSFET 600 V, 25 A, 125 m Features Description The SupreMOS MOSFET is Fairchild Semiconductor s next RDS(on) = 107 m (Typ.) @ VGS = 10 V, ID = 12.5 A generation of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 57 nC) employing a deep trench filling process that differentiates it from Low Ef

0.3. Size:421K fairchild semi
fci25n60n f102.pdf pdf_icon

June 2010 TM SupreMOS FCI25N60N_F102 tm N-Channel MOSFET 600V, 25A, 0.125 Features Description RDS(on) = 0.107 ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 57nC) process that differentiates it from preceding multi-epi based tech-

0.4. Size:422K citcorp
ci20t120p.pdf pdf_icon

Otros transistores... CHV1090A, CHV1570A, CHV1580A, CHV1590A, CHV2060A, CHV2080A, CHV2090A, CI1, D667, CI2711, CI2712, CI2713, CI2714, CI2923, CI2924, CI2925, CI2926

CI2 Datasheet. Equivalente