CI20T120P20A1200V Field Stop Trench IGBT Features Outline Positive temperature Co-efficient for easy parallel operation. TO-3P High current capability. High input impedance.0.543(13.8)0.197(5.00)0.528(13.4) Suffix "G" indicates Halogen-free part, ex.CI20T120PG. 0.181(4.60)0.065(1.65)0.386(9.8)0.057(1.45)0.370(9.4)0.219(5.55)0.130(3.3)0.203(5.15

November 2013FCI25N60NN-Channel SupreMOS MOSFET600 V, 25 A, 125 mFeatures DescriptionThe SupreMOS MOSFET is Fairchild Semiconductors next RDS(on) = 107 m (Typ.) @ VGS = 10 V, ID = 12.5 Ageneration of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 57 nC)employing a deep trench filling process that differentiates it from Low Ef

June 2010 TMSupreMOSFCI25N60N_F102tmN-Channel MOSFET 600V, 25A, 0.125Features Description RDS(on) = 0.107 ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 57nC)process that differentiates it from preceding multi-epi based tech-

CI20T120P20A1200V Field Stop Trench IGBT Features Outline Positive temperature Co-efficient for easy parallel operation. TO-3P High current capability. High input impedance.0.543(13.8)0.197(5.00)0.528(13.4) Suffix "G" indicates Halogen-free part, ex.CI20T120PG. 0.181(4.60)0.065(1.65)0.386(9.8)0.057(1.45)0.370(9.4)0.219(5.55)0.130(3.3)0.203(5.15

N- Channel SiC Power MOSFETCI28N120SMFeatures High Blocking Voltage with Low On-ResistancePackage High Speed Switching with Low Capacitances Easy to Parallel and Simple to DriveD (2) Avalanche Ruggedness Halogen Free, RoHS CompliantG (1)Benefits Higher System Efficiency Reduced Cooling Requirements1S (3) Increased Power Density 23