All Transistors. CI2 Equivalents Search

CI20T120P 20A1200V Field Stop Trench IGBT Features Outline Positive temperature Co-efficient for easy parallel operation. TO-3P High current capability. High input impedance. 0.543(13.8) 0.197(5.00) 0.528(13.4) Suffix "G" indicates Halogen-free part, ex.CI20T120PG. 0.181(4.60) 0.065(1.65) 0.386(9.8) 0.057(1.45) 0.370(9.4) 0.219(5.55) 0.130(3.3) 0.203(5.15... See More ⇒

November 2013 FCI25N60N N-Channel SupreMOS MOSFET 600 V, 25 A, 125 m Features Description The SupreMOS MOSFET is Fairchild Semiconductor s next RDS(on) = 107 m (Typ.) @ VGS = 10 V, ID = 12.5 A generation of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 57 nC) employing a deep trench filling process that differentiates it from Low Ef... See More ⇒

June 2010 TM SupreMOS FCI25N60N_F102 tm N-Channel MOSFET 600V, 25A, 0.125 Features Description RDS(on) = 0.107 ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 57nC) process that differentiates it from preceding multi-epi based tech-... See More ⇒

CI20T120P 20A1200V Field Stop Trench IGBT Features Outline Positive temperature Co-efficient for easy parallel operation. TO-3P High current capability. High input impedance. 0.543(13.8) 0.197(5.00) 0.528(13.4) Suffix "G" indicates Halogen-free part, ex.CI20T120PG. 0.181(4.60) 0.065(1.65) 0.386(9.8) 0.057(1.45) 0.370(9.4) 0.219(5.55) 0.130(3.3) 0.203(5.15... See More ⇒

N- Channel SiC Power MOSFET CI28N120SM Features High Blocking Voltage with Low On-Resistance Package High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive D (2) Avalanche Ruggedness Halogen Free, RoHS Compliant G (1) Benefits Higher System Efficiency Reduced Cooling Requirements 1 S (3) Increased Power Density 2 3 ... See More ⇒